公开(公告)号：US10787375B2

公开(公告)日：2020-09-29

申请号：US16176362

申请日：2018-10-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Saulius Smetona ,  Timothy James Bettles ,  Igor Agafonov ,  Ignas Gaska ,  Alexander Dobrinsky ,  Maxim S Shatalov ,  Arthur Peter Barber, III

IPC: C02F1/32 ,  C02F1/00 ,  C02F1/28

Abstract: A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.

公开(公告)号：US09595636B2

公开(公告)日：2017-03-14

申请号：US13852487

申请日：2013-03-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S Shatalov ,  Jianyu Deng ,  Alexander Dobrinsky ,  Xuhong Hu ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0095 ,  H01L33/22

Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

Abstract translation: 提供了一种具有改进的光提取的发光器件。 可以通过在衬底的表面上外延生长发光结构来形成发光器件。 衬底可以被刻划以在衬底上形成一组成角度的侧表面。 对于所述一组倾斜的侧面中的每个成角度的侧表面，到所述一组成角度的侧表面中的每个成角度的侧表面的至少一部分的表面切向矢量形成大约十到八十度之间的角度，其中正常 底物表面的载体。 可以清洁基板以从成角度的侧面清洁碎屑。

公开(公告)号：US09269788B2

公开(公告)日：2016-02-23

申请号：US13775038

申请日：2013-02-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Michael Shur ,  Jinwei Yang ,  Alexander Dobrinsky ,  Maxim S Shatalov

IPC: H01L21/338 ,  H01L29/66 ,  H01L29/778 ,  H01L21/285 ,  H01L29/40 ,  H01L29/45 ,  H01L33/00 ,  H01L29/205 ,  H01L33/14 ,  H01L29/15 ,  H01L29/20 ,  H01L29/201 ,  H01L33/40

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/737 ,  H01L29/778 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0016

Abstract: A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.

Abstract translation: 提供了用于形成与半导体层的欧姆接触的解决方案。 掩模材料被施加到半导体层表面上的一组接触区域。 随后，在半导体层的非掩蔽区域上形成一层或多层器件异质结构。 欧姆接触可以在形成器件异质结构的一个或多个层之后形成。 欧姆接触形成可以在低于在器件异质结构中形成任何半导体层的材料的质量被损坏的温度范围的处理温度下进行。

公开(公告)号：US08927959B2

公开(公告)日：2015-01-06

申请号：US13803681

申请日：2013-03-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S Shatalov ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/32 ,  H01L33/04 ,  H01L33/10 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/06 ,  G06F17/5068 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/10 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0058

Abstract: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

Abstract translation: 提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。

公开(公告)号：US20130320352A1

公开(公告)日：2013-12-05

申请号：US13909621

申请日：2013-06-04

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L21/768 ,  H01L29/20

CPC classification number: H01L21/768 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/452 ,  H01L33/38 ,  H01L2933/0016

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.