公开(公告)号：US20150333091A1

公开(公告)日：2015-11-19

申请号：US14595336

申请日：2015-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Kyung-Ho Lee ,  Jun-Suk Lee

IPC: H01L27/146

CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37457

Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

Abstract translation: 图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中 第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时， 第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

公开(公告)号：US20150243693A1

公开(公告)日：2015-08-27

申请号：US14340719

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/146 ,  H01L29/778

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器可以包括具有限定和分割第一有源区和第二有源区的第一器件隔离层的衬底，设置在衬底中的光电二极管，并且可以被配置为与第一器件隔离层垂直重叠，传输栅电极 可以设置在第一有源区中并且可以被配置为垂直地重叠光电二极管，并且浮动扩散区可以在第一有源区中。 传输栅电极可以埋在衬底中。

公开(公告)号：US20140260550A1

公开(公告)日：2014-09-18

申请号：US14207348

申请日：2014-03-12

Applicant: Samsung Electronics Co. Ltd.

Inventor： Kwang-Min Kil ,  Seong-Joon Kweon ,  Kyung-Ho Lee

IPC: G01M3/02

CPC classification number: G01M3/3272

Abstract: A method of checking a sealing state of a housing includes starting an operation of a pressure sensor configured to measure an internal pressure of the housing. The method includes checking whether or not the housing is pressed. The method further includes checking the sealing state of the housing through checking a measured value of the pressure sensor under a pressure of the housing. An apparatus for checking a sealing state of a housing includes the housing configured to keep an internal space thereof sealed off from an outside, a pressure sensor configured to measure a pressure of the internal space, and an interface unit configured to provide to the pressure sensor a control signal that controls an operation of the pressure sensor, and provide pressure information detected through the pressure sensor.

Abstract translation: 一种检查壳体的密封状态的方法，包括开始构造成测量壳体的内部压力的压力传感器的操作。 该方法包括检查外壳是否被按压。 该方法还包括通过在壳体的压力下检查压力传感器的测量值来检查壳体的密封状态。 用于检查壳体的密封状态的装置包括被构造成保持其内部空间与外部密封的壳体，被配置为测量内部空间的压力的压力传感器以及被配置成提供给压力传感器的接口单元 控制信号，其控制压力传感器的操作，并提供通过压力传感器检测的压力信息。

公开(公告)号：US20140008705A1

公开(公告)日：2014-01-09

申请号：US13835669

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon- Young Choi ,  Kyung-Ho Lee ,  Sang-Jun Choi ,  Tae-Hyoung Koo ,  Sam-Jong Choi

IPC: H01L29/78 ,  H01L29/04

CPC classification number: H01L29/7827 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H01L29/045

Abstract: A semiconductor device includes field regions formed in a substrate, and n-type impurity regions disposed between the field regions. At least one of the side surfaces of the field regions has a {100}, {310}, or {311} plane.

Abstract translation: 半导体器件包括形成在衬底中的场区域和设置在场区域之间的n型杂质区域。 场区域的至少一个侧面具有{100}，{310}或{311}平面。

公开(公告)号：US09762821B2

公开(公告)日：2017-09-12

申请号：US14583029

申请日：2014-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Ho Lee ,  Hee-Sang Kwon

IPC: H04N5/335 ,  H04N5/347 ,  H04N5/378 ,  H04N5/355

CPC classification number: H04N5/347 ,  H04N5/35554 ,  H04N5/378

Abstract: A unit pixel of an image sensor includes a charge generation unit, a signal generation unit, and a ground control transistor. The charge generation unit generates photo-charges in response to incident light and provides the photo-charges to a floating diffusion area in response to a transmission control signal. The signal generation unit generates an analog signal having a magnitude corresponding to an electrical potential of the floating diffusion area based on a reset control signal and a row selection signal. The ground control transistor is coupled between the floating diffusion area and a ground voltage, and is turned on in response to a ground control signal.

公开(公告)号：US09711557B2

公开(公告)日：2017-07-18

申请号：US14641621

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjoo Nah ,  Jung-Chak Ahn ,  Kyung-Ho Lee

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

公开(公告)号：US09559138B2

公开(公告)日：2017-01-31

申请号：US14878631

申请日：2015-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yi-Tae Kim ,  Kyung-Ho Lee ,  Dong-Young Jang ,  Sung-Ho Choi

IPC: H01L31/062 ,  H01L31/113 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.

Abstract translation: 图像传感器包括第一基板，光电二极管阵列，第一布线结构，第二布线结构，第三布线结构和遮光层图案。 光电二极管阵列设置在第一基板中。 光电二极管阵列包括第一区域中的第一光电二极管，第二区域中的第二光电二极管和第三区域中的第三光电二极管。 第一布线结构设置在第一区域中。 第一布线结构电连接到第一光电二极管。 第二布线结构设置在第二区域中。 第二布线结构包括电源布线。 第三布线结构设置在第三区域中。 第三布线结构电连接到第三光电二极管。 遮光层图案设置在第一基板上。 遮光层图案覆盖第三区域和第四区域。

公开(公告)号：US09549140B2

公开(公告)日：2017-01-17

申请号：US14619176

申请日：2015-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Woo Jung ,  Kyung-Ho Lee

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/232 ,  H04N5/353 ,  H04N5/357 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H04N5/23245 ,  H04N5/3532 ,  H04N5/3575 ,  H04N5/37457

Abstract: An image sensor includes a row driver, a pixel array, an analog-to-digital converter, and an output compensating circuit. The row driver generates a photo-gate control signal, a storage control signal, a transfer control signal, a reset control signal and a row selecting signal. The pixel array includes a plurality of pixels, and each pixel uses a deep trench isolation (DTI) region as a photo gate. The pixel array receives optical signals, converts the optical signals to electric signals, and outputs the electric signals as image signals in response to the photo-gate control signal, the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal. The analog-to-digital converter performs an analog-to-digital conversion on the image signals to generate first signals, and the output compensating circuit compensates the first signals.

Abstract translation: 图像传感器包括行驱动器，像素阵列，模数转换器和输出补偿电路。 行驱动器产生光栅控制信号，存储控制信号，传输控制信号，复位控制信号和行选择信号。 像素阵列包括多个像素，并且每个像素使用深沟槽隔离（DTI）区域作为光栅。 像素阵列接收光信号，将光信号转换为电信号，并响应于光栅控制信号，存储控制信号，传输控制信号，复位控制信号和视频信号输出电信号作为图像信号 行选择信号。 模数转换器对图像信号执行模数转换以产生第一信号，并且输出补偿电路补偿第一信号。

公开(公告)号：US20160021322A1

公开(公告)日：2016-01-21

申请号：US14619176

申请日：2015-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Woo Jung ,  Kyung-Ho Lee

IPC: H04N5/378 ,  H04N5/376

CPC classification number: H04N5/378 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H04N5/23245 ,  H04N5/3532 ,  H04N5/3575 ,  H04N5/37457

Abstract: An image sensor includes a row driver, a pixel array, an analog-to-digital converter, and an output compensating circuit. The row driver generates a photo-gate control signal, a storage control signal, a transfer control signal, a reset control signal and a row selecting signal. The pixel array includes a plurality of pixels, and each pixel uses a deep trench isolation (DTI) region as a photo gate. The pixel array receives optical signals, converts the optical signals to electric signals, and outputs the electric signals as image signals in response to the photo-gate control signal, the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal. The analog-to-digital converter performs an analog-to-digital conversion on the image signals to generate first signals, and the output compensating circuit compensates the first signals.

Abstract translation: 图像传感器包括行驱动器，像素阵列，模数转换器和输出补偿电路。 行驱动器产生光栅控制信号，存储控制信号，传输控制信号，复位控制信号和行选择信号。 像素阵列包括多个像素，并且每个像素使用深沟槽隔离（DTI）区域作为光栅。 像素阵列接收光信号，将光信号转换为电信号，并响应于光栅控制信号，存储控制信号，传输控制信号，复位控制信号和视频信号输出电信号作为图像信号 行选择信号。 模数转换器对图像信号执行模数转换以产生第一信号，并且输出补偿电路补偿第一信号。

公开(公告)号：US20140313383A1

公开(公告)日：2014-10-23

申请号：US14256106

申请日：2014-04-18

Applicant: Samsung Electronics Co, Ltd.

Inventor： Gwi-Deok Lee ,  Kyung-Ho Lee ,  Hiroshige Goto ,  Sae-Young Kim ,  Sang-Chul Sul ,  Myung-Won Lee

IPC: H04N5/335

CPC classification number: H04N5/3559 ,  H04N5/35509

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract translation: 图像传感器包括光电转换单元，信号生成单元和反馈单元。 光电转换单元形成在基板上方，并根据驱动电压检测入射光以产生光电荷。 信号生成单元形成在基板上，并且基于光电荷产生模拟信号。 反馈单元基于从光电转换单元生成的光电荷的量来产生驱动电压。 图像传感器可以执行宽动态范围（WDR）功能。