公开(公告)号：US09978753B2

公开(公告)日：2018-05-22

申请号：US15410488

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/00 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/90

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US11929389B2

公开(公告)日：2024-03-12

申请号：US17324492

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L21/28 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L28/40 ,  H10B12/315

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US11588012B2

公开(公告)日：2023-02-21

申请号：US17200081

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo Kang ,  Sang-yeol Kang ,  Youn-soo Kim ,  Jin-su Lee ,  Hyung-suk Jung ,  Kyu-ho Cho

IPC: H01L49/02 ,  H01L21/285 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/321 ,  H01L27/108

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

公开(公告)号：US10882873B2

公开(公告)日：2021-01-05

申请号：US16249067

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Kang-yong Lee ,  Sang-ick Lee ,  Sang-yong Jeon

IPC: C07F7/22 ,  C23C16/455 ,  C23C16/40

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.

公开(公告)号：US10752645B2

公开(公告)日：2020-08-25

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10 ,  C23C16/40 ,  C23C16/455

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US10600643B2

公开(公告)日：2020-03-24

申请号：US15866568

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Hyun-jun Kim ,  Jin-sun Lee ,  Jae-soon Lim

IPC: H01L21/02 ,  C23C16/40 ,  H01L27/11582 ,  H01L27/108 ,  C23C16/455 ,  C23C16/06 ,  C23C16/02 ,  H01L21/28 ,  H01L27/1157

Abstract: A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

公开(公告)号：US20200091275A1

公开(公告)日：2020-03-19

申请号：US16520912

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US20190355806A1

公开(公告)日：2019-11-21

申请号：US16273603

申请日：2019-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo KANG ,  Sang-yeol Kang ,  Youn-soo Kim ,  Jin-su Lee ,  Hyung-suk Jung ,  Kyu-ho CHO

IPC: H01L49/02 ,  H01L21/285 ,  H01L21/02 ,  H01L27/108 ,  H01L21/321 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

公开(公告)号：US10329312B2

公开(公告)日：2019-06-25

申请号：US15092953

申请日：2016-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US20180240800A1

公开(公告)日：2018-08-23

申请号：US15956287

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/90

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.