PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

    公开(公告)号:US20220223385A1

    公开(公告)日:2022-07-14

    申请号:US17466184

    申请日:2021-09-03

    Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

    Method of fabricating a semiconductor device

    公开(公告)号:US12224214B2

    公开(公告)日:2025-02-11

    申请号:US18416585

    申请日:2024-01-18

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

    Method of fabricating a semiconductor device

    公开(公告)号:US11955387B2

    公开(公告)日:2024-04-09

    申请号:US17386323

    申请日:2021-07-27

    CPC classification number: H01L22/12 H01L21/31144

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

    Rotary body module and chemical mechanical polishing apparatus having the same

    公开(公告)号:US11590628B2

    公开(公告)日:2023-02-28

    申请号:US16747034

    申请日:2020-01-20

    Abstract: A chemical mechanical polishing apparatus includes a fixing portion; and a rotary body module including a rotating shaft rotatably installed on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted, wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit, wherein the first and second driving members are comprised of a magnet or an electromagnet, wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, and wherein the first rotating unit and the second rotating unit are independently tilted.

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