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11.
公开(公告)号:US12183555B2
公开(公告)日:2024-12-31
申请号:US17981874
申请日:2022-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghan Baek , Sangki Nam , Dongseok Han , Namkyun Kim , Kwonsang Seo , Kuihyun Yoon
IPC: H01J37/32
Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.
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公开(公告)号:US11940620B2
公开(公告)日:2024-03-26
申请号:US17508224
申请日:2021-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Changsoon Lim , Youngdo Kim , Daewon Kang , Chansoo Kang , Hoonseop Kim , Sangki Nam , Youngduk Suh , Donghyub Lee , Jonghun Pi
CPC classification number: G02B27/0006 , B08B7/0035 , B08B7/04 , G01N33/0027 , G03F7/70033 , G03F7/7085 , G03F7/70925 , G06T7/001
Abstract: A method of cleaning a collector of an extreme ultraviolet light source system includes introducing the collector separated from the extreme ultraviolet light source system into a chamber; capturing an optical image of a reflective surface of the collector; measuring a contamination level of the reflective surface by comparing the optical image with a prestored standard image; performing a first cleaning operation if the contamination level exceeds a preset first reference value, the first cleaning operation including cleaning the reflective surface by spraying dry ice particles onto the reflective surface; and performing a second cleaning operation if the contamination level is less than or equal to the preset first reference value. The second cleaning operation includes cleaning the reflective surface by radiating atmospheric plasma onto the reflective surface and measuring a microcontamination level and a damage level of the reflective surface.
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公开(公告)号:US11869751B2
公开(公告)日:2024-01-09
申请号:US18085949
申请日:2022-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byungjo Kim , Sangki Nam , Jungmin Ko , Kwonsang Seo , Seungbo Shim , Younghyun Jo
IPC: H01J37/32
CPC classification number: H01J37/32541 , H01J37/32642 , H01J37/32715
Abstract: An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.
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公开(公告)号:US11705306B2
公开(公告)日:2023-07-18
申请号:US17470337
申请日:2021-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunbae Kim , Hyunjae Lee , Youngdo Kim , Hyejin Kim , Sangki Nam , Chanhee Park , Minho Jung
IPC: H01J37/32
CPC classification number: H01J37/32174 , H01J37/32146 , H01J2237/002
Abstract: A variable frequency and non-sinusoidal power generator includes a pulse module circuit, a slope module circuit, and first and second cooling systems. The pulse module circuit and the slope module circuit includes control switches, and generates at least one of a output currents and a output voltages by selectively turning on/off the control switches based on control signals. The first and second cooling systems are disposed at first and second sides of the control switches. A bias power having a variable frequency and a non-sinusoidal waveform is generated based on the control signals, at least one of the output currents and the output voltages.
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15.
公开(公告)号:US20230143049A1
公开(公告)日:2023-05-11
申请号:US17981874
申请日:2022-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghan Baek , Sangki Nam , Dongseok Han , Namkyun Kim , Kwonsang Seo , Kuihyun Yoon
IPC: H01J37/32
CPC classification number: H01J37/32642 , H01J37/32532
Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.
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16.
公开(公告)号:US20230109672A1
公开(公告)日:2023-04-13
申请号:US17850257
申请日:2022-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changsoon Lim , Youngdo Kim , Daewon Kang , Chansoo Kang , Kyunghyun Kim , Sangki Nam , Kyunjin Lee , Sungho Jang , Jonghun Pi
IPC: H01J37/32
Abstract: An apparatus includes first and second VI sensors, an optical sensor, and an arcing detector. The first VI sensor is disposed in a power filter or on a power supply line connected to a heater disposed in a lower electrode of a process chamber in which a plasma process is performed. The first VI sensor senses a harmonic generated from a first power supply supplying power to the lower electrode and outputs a first signal. The optical sensor senses an intensity of light generated from the process chamber and outputs a second signal. The second VI sensor is disposed on a power supply line connected to an upper electrode and senses a harmonic generated from a second power supply supplying power to the upper electrode and outputs a third signal. The arcing detector determines whether arcing occurs based on one or more of the first, second, and third signals.
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公开(公告)号:US11545344B2
公开(公告)日:2023-01-03
申请号:US17188064
申请日:2021-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byungjo Kim , Sangki Nam , Jungmin Ko , Kwonsang Seo , Seungbo Shim , Younghyun Jo
IPC: H01J37/32
Abstract: An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.
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