公开(公告)号：US12183555B2

公开(公告)日：2024-12-31

申请号：US17981874

申请日：2022-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghan Baek ,  Sangki Nam ,  Dongseok Han ,  Namkyun Kim ,  Kwonsang Seo ,  Kuihyun Yoon

IPC: H01J37/32

Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.

公开(公告)号：US11869751B2

公开(公告)日：2024-01-09

申请号：US18085949

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungjo Kim ,  Sangki Nam ,  Jungmin Ko ,  Kwonsang Seo ,  Seungbo Shim ,  Younghyun Jo

IPC: H01J37/32

CPC classification number: H01J37/32541 ,  H01J37/32642 ,  H01J37/32715

Abstract: An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.

公开(公告)号：US20230143049A1

公开(公告)日：2023-05-11

申请号：US17981874

申请日：2022-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghan Baek ,  Sangki Nam ,  Dongseok Han ,  Namkyun Kim ,  Kwonsang Seo ,  Kuihyun Yoon

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32532

Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.

公开(公告)号：US11545344B2

公开(公告)日：2023-01-03

申请号：US17188064

申请日：2021-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungjo Kim ,  Sangki Nam ,  Jungmin Ko ,  Kwonsang Seo ,  Seungbo Shim ,  Younghyun Jo

IPC: H01J37/32

Abstract: An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.