公开(公告)号：US10224500B2

公开(公告)日：2019-03-05

申请号：US14974096

申请日：2015-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryuichi Satoh ,  Kyusik Kim ,  Kyung Bae Park ,  Yong Wan Jin ,  Chuljoon Heo

IPC: H01L21/00 ,  H01L51/44 ,  H01L27/30 ,  H01L51/52 ,  H01L51/00

Abstract: An organic electronic device includes an organic device including an organic material, a first protective film on the organic device, a second protective film on the first protective film and including a same material as the first protective film, and a third protective film on the second protective film.

公开(公告)号：US09343502B2

公开(公告)日：2016-05-17

申请号：US14336439

申请日：2014-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu Sik Kim ,  Ryuichi Satoh ,  Kyung Bae Park ,  Chul Joon Heo ,  Yong Wan Jin

IPC: H01L27/146 ,  H01L51/44 ,  H01L27/30 ,  H01L51/00 ,  H01L51/42

CPC classification number: H01L27/14645 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/307 ,  H01L51/0068 ,  H01L51/4273 ,  H01L51/442 ,  H01L2251/305 ,  H01L2251/306 ,  H01L2251/308 ,  Y02E10/549

Abstract: Disclosed are an organic photoelectronic device including a first light-transmitting electrode, an active layer positioned on one side of the first light-transmitting electrode, and a second light-transmitting electrode positioned on one side of the active layer, wherein the first light-transmitting electrode and the second light-transmitting electrode independently comprise at least one of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), and fluorine-doped tin oxide (FTO). Also disclosed is an image sensor including the organic photoelectronic device.

Abstract translation: 公开了一种有机光电子器件，其包括第一透光电极，位于第一透光电极一侧的有源层和位于有源层一侧的第二透光电极，其中， 透明电极和第二透光电极独立地包括氧化铟锡（ITO），氧化铟锌（IZO），氧化锡（SnO），氧化铝（ATO），氧化铝锌（AZO）和氧化铝 氟掺杂氧化锡（FTO）。 还公开了包括有机光电子器件的图像传感器。