公开(公告)号：US20230290794A1

公开(公告)日：2023-09-14

申请号：US18319101

申请日：2023-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato FUJITA ,  Yunki Lee ,  Eunsub Shim ,  Kyungho Lee ,  Bumsuk Kim ,  Taehan Kim

IPC: H01L27/146 ,  H04N25/59 ,  H04N25/704 ,  H04N25/709 ,  H04N25/772

CPC classification number: H01L27/14612 ,  H01L27/14645 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H04N25/59 ,  H04N25/704 ,  H04N25/709 ,  H04N25/772

Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

公开(公告)号：US20220190007A1

公开(公告)日：2022-06-16

申请号：US17465217

申请日：2021-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuncheol KIM ,  Kyungho LEE ,  Kazunori KAKEHI ,  Doosik SEOL ,  Kyungduck LEE ,  Taesub JUNG ,  Masato FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate having first and second surfaces, pixel regions arranged in a direction parallel to the first surface, first and second photodiodes isolated from each other in each of the pixel regions, a first device isolation film between the pixel regions, a pair of second device isolation films between the first and second photodiodes and extending from the first device isolation film, a doped layer adjacent to the pair of second device isolation films and extending from the second surface to a predetermined depth and spaced apart from the first surface, the doped layer being isolated from the first device isolation film, and a barrier area between the pair of second device isolation films and having a potential greater than a potential of a portion of the substrate adjacent to the barrier area.

公开(公告)号：US20220123032A1

公开(公告)日：2022-04-21

申请号：US17360447

申请日：2021-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Duck LEE ,  Doo Sik SEOL ,  Kyung Ho LEE ,  Tae Sub JUNG ,  Masato FUJITA

IPC: H01L27/146 ,  H01L23/60

Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.