公开(公告)号：US20230268035A1

公开(公告)日：2023-08-24

申请号：US18139655

申请日：2023-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungdoc Kim ,  Youngchun Kwon ,  Misuk Kim ,  Jiho Yoo ,  Younsuk Choi

IPC: G16C20/40 ,  G16C20/70 ,  G06N3/086

CPC classification number: G16C20/40 ,  G16C20/70 ,  G06N3/086

Abstract: Generating a new chemical structure by using a neural network using an expression region that expresses a particular property in a descriptor or an image for a reference chemical structure. The new chemical structure may be generated by changing a partial structure in the reference chemical structure that corresponds to the expression region.

公开(公告)号：US11735637B2

公开(公告)日：2023-08-22

申请号：US17400901

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US11127828B2

公开(公告)日：2021-09-21

申请号：US16432298

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US20190355444A1

公开(公告)日：2019-11-21

申请号：US16402410

申请日：2019-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiho Yoo ,  Youngmin Nam ,  Dongseon Lee ,  Younsuk Choi ,  Youngchun Kwon ,  Kyungdoc Kim

IPC: G16C20/50 ,  G16C20/70 ,  G16C20/80 ,  G06N3/08 ,  G06F17/50

Abstract: A method of generating a molecular structure includes generating, based on a predetermined number of a plurality of nodes, all possible two-dimensional (2D) graphs and a plurality of edges representing connections between the plurality of nodes and, for each 2D graph from among the generated 2D graphs, generating all possible molecular structures based on the 2D graph by substituting each of the plurality of nodes with a polygonal ring structure including carbon atoms and substituting the edges with bonds between polygonal ring structures. Also, a method includes substituting at least one of carbon atoms included in the polygonal ring structures with an atom other than a carbon atom.

公开(公告)号：US20240234500A9

公开(公告)日：2024-07-11

申请号：US18141990

申请日：2023-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiho Yoo ,  Kihyung Ko ,  Junsoo Kim ,  Hyunsup Kim ,  Jihoon Cha

IPC: H01L29/06 ,  H01L29/66

CPC classification number: H01L29/0653 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/775

Abstract: A semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the isolation pattern, a liner including a material different from the isolation pattern; a gate structure contacting an upper surface of the active pattern and an upper surface of the liner; and a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure.

公开(公告)号：US11670403B2

公开(公告)日：2023-06-06

申请号：US16269092

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungdoc Kim ,  Youngchun Kwon ,  Misuk Kim ,  Jiho Yoo ,  Younsuk Choi

IPC: G01N33/48 ,  G01N33/50 ,  G16C20/40 ,  G16C20/70 ,  G06N3/086

CPC classification number: G16C20/40 ,  G06N3/086 ,  G16C20/70

Abstract: Generating a new chemical structure by using a neural network using an expression region that expresses a particular property in a descriptor or an image for a reference chemical structure. The new chemical structure may be generated by changing a partial structure in the reference chemical structure that corresponds to the expression region.

公开(公告)号：US20210376099A1

公开(公告)日：2021-12-02

申请号：US17400901

申请日：2021-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US11017314B2

公开(公告)日：2021-05-25

申请号：US15189373

申请日：2016-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiho Yoo ,  Youngchun Kwon ,  Kyungdoc Kim ,  Jaikwang Shin ,  Hyosug Lee ,  Younsuk Choi

IPC: G06N20/00 ,  G06N7/00 ,  G06F16/245 ,  G16C20/30 ,  G06F30/20 ,  G16C20/70

Abstract: A method for searching a new material includes: performing a learning on a material model, which is modeled based on a known material; determining a candidate material by inputting a targeted physical property to a result of the learning; and determining the new material from the candidate material.

公开(公告)号：US20200066377A1

公开(公告)日：2020-02-27

申请号：US16269092

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungdoc Kim ,  Youngchun Kwon ,  Misuk Kim ,  Jiho Yoo ,  Younsuk Choi

IPC: G16C20/40 ,  G06N3/08 ,  G16C20/70

Abstract: Generating a new chemical structure by using a neural network using an expression region that expresses a particular property in a descriptor or an image for a reference chemical structure. The new chemical structure may be generated by changing a partial structure in the reference chemical structure that corresponds to the expression region.

公开(公告)号：US20190312119A1

公开(公告)日：2019-10-10

申请号：US16432298

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae CHO ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/49 ,  H01L21/28

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.