公开(公告)号：US12014977B2

公开(公告)日：2024-06-18

申请号：US18199824

申请日：2023-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Seok Hong ,  Dongwoo Kim ,  Hyunah Kim ,  Un-Byoung Kang ,  Chungsun Lee

IPC: H01L21/00 ,  H01L21/48 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/49838 ,  H01L21/4857 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822

Abstract: Disclosed are interconnection structures, semiconductor packages including the same, and methods of fabricating the same. The interconnection structure comprises a first dielectric layer, a wiring pattern formed in the first dielectric layer, a portion of the wiring pattern exposed with respect to a top surface of the first dielectric layer, a second dielectric layer on the first dielectric layer, the second dielectric layer including an opening that exposes the exposed portion of the wiring pattern, a pad formed in the opening of the second dielectric layer, the pad including a base part that covers the exposed portion of the wiring pattern at a bottom of the opening and a sidewall part that extends upwardly along an inner lateral surface of the opening from the base part, a first seed layer interposed between the second dielectric layer and a first lateral surface of the sidewall part, the first seed layer being in contact with the first lateral surface and the second dielectric layer, and a second seed layer that conformally covers a second lateral surface of the sidewall part and a top surface of the base part, the second lateral surface being opposite to the first lateral surface the second dielectric layer.

公开(公告)号：US11688679B2

公开(公告)日：2023-06-27

申请号：US17324569

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Seok Hong ,  Dongwoo Kim ,  Hyunah Kim ,  Un-Byoung Kang ,  Chungsun Lee

IPC: H01L23/48 ,  H01L23/498 ,  H01L21/48 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L21/4857 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822

Abstract: Disclosed are interconnection structures, semiconductor packages including the same, and methods of fabricating the same. The interconnection structure comprises a first dielectric layer, a wiring pattern formed in the first dielectric layer, a portion of the wiring pattern exposed with respect to a top surface of the first dielectric layer, a second dielectric layer on the first dielectric layer, the second dielectric layer including an opening that exposes the exposed portion of the wiring pattern, a pad formed in the opening of the second dielectric layer, the pad including a base part that covers the exposed portion of the wiring pattern at a bottom of the opening and a sidewall part that extends upwardly along an inner lateral surface of the opening from the base part, a first seed layer interposed between the second dielectric layer and a first lateral surface of the sidewall part, the first seed layer being in contact with the first lateral surface and the second dielectric layer, and a second seed layer that conformally covers a second lateral surface of the sidewall part and a top surface of the base part, the second lateral surface being opposite to the first lateral surface the second dielectric layer.

公开(公告)号：US09054228B2

公开(公告)日：2015-06-09

申请号：US14160008

申请日：2014-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Kyoung Choi ,  Jong-Youn Kim ,  Sang-Wook Park ,  Hae-Jung Yu ,  In-Young Lee ,  Sang-Uk Han ,  Ji-Seok Hong

IPC: H01L23/02 ,  H01L23/34 ,  H01L23/00 ,  H01L23/36 ,  H01L23/373 ,  H01L23/433 ,  H01L23/48 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/97 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3737 ,  H01L23/4334 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

Abstract: Semiconductor packages including a heat spreader and methods of forming the same are provided. The semiconductor packages may include a first semiconductor chip, a second semiconductor chip, and a heat spreader stacked sequentially. The semiconductor packages may also include a thermal interface material (TIM) layer surrounding the second semiconductor chip and directly contacting a sidewall of the second semiconductor chip. An upper surface of the TIM layer may directly contact a lower surface of the heat spreader, and a sidewall of the TIM layer may be substantially coplanar with a sidewall of the heat spreader. In some embodiments, a sidewall of the first semiconductor chip may be substantially coplanar with the sidewall of the TIM layer.

Abstract translation: 提供了包括散热器的半导体封装及其形成方法。 半导体封装可以包括顺序堆叠的第一半导体芯片，第二半导体芯片和散热器。 半导体封装还可以包括围绕第二半导体芯片并直接接触第二半导体芯片的侧壁的热界面材料（TIM）层。 TIM层的上表面可以直接接触散热器的下表面，并且TIM层的侧壁可以与散热器的侧壁基本上共面。 在一些实施例中，第一半导体芯片的侧壁可以与TIM层的侧壁基本共面。