公开(公告)号：US20200381311A1

公开(公告)日：2020-12-03

申请号：US16707118

申请日：2019-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Chanhyeong Lee ,  Jinkyu Jang ,  Rakhwan Kim ,  Dongsoo Lee

IPC: H01L21/8238 ,  H01L27/11 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28

Abstract: A semiconductor device may include a channel pattern stacked on a substrate and a gate electrode on the substrate. The channel pattern includes semiconductor patterns. The gate electrode extends to cross the channel pattern. The gate electrode may include dielectric layers, first work function adjusting patterns, and second work function adjusting patterns. The dielectric layers may enclose the semiconductor patterns, respectively. The first work function adjusting patterns may enclose the dielectric layers, respectively, and the second work function adjusting patterns may enclose the first work function adjusting patterns, respectively. The first work function adjusting patterns may be formed of an aluminum-containing material, and each corresponding one of the first work function adjusting patterns may be in contact with a corresponding one of the second work function adjusting patterns enclosing the corresponding one of the first work function adjusting patterns.

公开(公告)号：US10475898B2

公开(公告)日：2019-11-12

申请号：US15938716

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Jae-Jung Kim ,  Jinkyu Jang ,  Sangyong Kim ,  Hoonjoo Na ,  Dongsoo Lee ,  Sangjin Hyun

IPC: H01L21/28 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51 ,  H01L27/11 ,  H01L29/06

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.