公开(公告)号：US12182381B2

公开(公告)日：2024-12-31

申请号：US18460180

申请日：2023-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Yeon Kim ,  Jae Myoung Lee

IPC: G06F3/0483 ,  G06F3/0482 ,  G06F3/04845 ,  G06F3/0485 ,  G06F3/04855 ,  G06F3/04883 ,  G06Q10/109

Abstract: A screen display method and apparatus of a mobile terminal is provided for changing a screen represented by an index to another screen represented by a newly selected index. A screen display method of a mobile terminal includes displaying a page represented by an index, the page including an index region having a plurality of indices and a content region displaying content corresponding to the index highlighted in the index region, selecting a new index in the index region according to a selection input, and changing the page represented by the highlighted index for a new page represented by the new index, the new page appearing in a direction from a position of the new index to a position of the highlighted index.

公开(公告)号：US11747963B2

公开(公告)日：2023-09-05

申请号：US17838826

申请日：2022-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Yeon Kim ,  Jae Myoung Lee

IPC: G06F3/0485 ,  G06F3/0483 ,  G06F3/0488 ,  G06F3/04855 ,  G06F3/04883 ,  G06F3/0482 ,  G06F3/04845 ,  G06Q10/109

CPC classification number: G06F3/0483 ,  G06F3/0482 ,  G06F3/0485 ,  G06F3/04845 ,  G06F3/04855 ,  G06F3/04883 ,  G06Q10/109

Abstract: A screen display method and apparatus of a mobile terminal is provided for changing a screen represented by an index to another screen represented by a newly selected index. A screen display method of a mobile terminal includes displaying a page represented by an index, the page including an index region having a plurality of indices and a content region displaying content corresponding to the index highlighted in the index region, selecting a new index in the index region according to a selection input, and changing the page represented by the highlighted index for a new page represented by the new index, the new page appearing in a direction from a position of the new index to a position of the highlighted index.

公开(公告)号：US11054930B2

公开(公告)日：2021-07-06

申请号：US16311416

申请日：2017-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Wook Nam ,  Youngmi Kim ,  Youngseong Kim ,  Hyo-Sang Bang ,  Sangsu Lee ,  Youngjay Lee ,  Jae Myoung Lee ,  Kyungsoo Lim ,  Soe-Youn Yim ,  Martin Jung ,  Jinhoon Cho ,  Hyunyeul Lee ,  Jongmoo Lee ,  Seung-Min Choi

IPC: G06F3/041 ,  G06F3/0484 ,  G06F3/0488

Abstract: Disclosed in various examples of the present invention are a method and a device for enabling a system function using a system button to be used according to a user input, when displaying a picture related to an application through the entire area of a display without displaying a system button (provided transparently or translucently). According to various examples of the present invention, an electronic device comprises a display, a memory, and a processor electrically connected to the display and the memory, wherein the processor can be configured so as to sense, on the display, a user input through a touch region including the system button, identify the user input, and execute a system function by means of the system button or an application function according to the user input in the touch area including the system button. Various examples are possible.

公开(公告)号：US10991692B2

公开(公告)日：2021-04-27

申请号：US16840764

申请日：2020-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung Ho Kang ,  Gyeongseop Kim ,  Jeong Lim Kim ,  Jae Myoung Lee ,  Heung Suk Oh ,  Yeon Hwa Lim ,  Joong Won Jeon ,  Sung Min Kim

IPC: H01L27/088 ,  H01L21/033 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/417

Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.

公开(公告)号：US20200043922A1

公开(公告)日：2020-02-06

申请号：US16593058

申请日：2019-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung Ho Kang ,  Gyeongseop Kim ,  Jeong Lim Kim ,  Jae Myoung Lee ,  Heung Suk Oh ,  Yeon Hwa Lim ,  Joong Won Jeon ,  Sung Min Kim

IPC: H01L27/088 ,  H01L21/308 ,  H01L21/8234 ,  H01L21/033 ,  H01L27/12 ,  H01L21/84

Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.