-
公开(公告)号：US20180286859A1
公开(公告)日：2018-10-04
申请号：US15837310
申请日：2017-12-11
发明人： Myoung Ho Kang , Gyeongseop Kim , Jeong Lim Kim , Jae Myoung Lee , Heung Suk Oh , Yeon Hwa Lim , Joong Won Jeon
IPC分类号： H01L27/088 , H01L21/033 , H01L21/308 , H01L21/8234
CPC分类号： H01L27/0886 , H01L21/0334 , H01L21/3083 , H01L21/823431 , H01L21/845 , H01L27/1211 , H01L29/0657 , H01L29/41791
摘要： A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.
-
2.发明申请公开(公告)号：US20200235097A1
公开(公告)日：2020-07-23
申请号：US16840764
申请日：2020-04-06
发明人： Myoung Ho Kang , Gyeongseop Kim , Jeong Lim Kim , Jae Myoung Lee , Heung Suk Oh , Yeon Hwa Lim , Joong Won Jeon , Sung Min Kim
IPC分类号： H01L27/088 , H01L27/12 , H01L21/84 , H01L21/308 , H01L21/8234 , H01L21/033
摘要： A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.
-
3.发明授权公开(公告)号：US10475789B2
公开(公告)日：2019-11-12
申请号：US15837310
申请日：2017-12-11
发明人： Myoung Ho Kang , Gyeongseop Kim , Jeong Lim Kim , Jae Myoung Lee , Heung Suk Oh , Yeon Hwa Lim , Joong Won Jeon , Sung Min Kim
IPC分类号： H01L27/088 , H01L21/033 , H01L21/8234 , H01L21/308 , H01L21/84 , H01L27/12 , H01L29/06 , H01L29/417
摘要： A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.
-
公开(公告)号：US10991692B2
公开(公告)日：2021-04-27
申请号：US16840764
申请日：2020-04-06
发明人： Myoung Ho Kang , Gyeongseop Kim , Jeong Lim Kim , Jae Myoung Lee , Heung Suk Oh , Yeon Hwa Lim , Joong Won Jeon , Sung Min Kim
IPC分类号： H01L27/088 , H01L21/033 , H01L21/8234 , H01L21/308 , H01L21/84 , H01L27/12 , H01L29/06 , H01L29/417
摘要： A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.
-
5.发明申请公开(公告)号：US20200043922A1
公开(公告)日：2020-02-06
申请号：US16593058
申请日：2019-10-04
发明人： Myoung Ho Kang , Gyeongseop Kim , Jeong Lim Kim , Jae Myoung Lee , Heung Suk Oh , Yeon Hwa Lim , Joong Won Jeon , Sung Min Kim
IPC分类号： H01L27/088 , H01L21/308 , H01L21/8234 , H01L21/033 , H01L27/12 , H01L21/84
摘要： A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.
-
-
-
-
搜索结果
5 条记录 (耗时 0.019 秒)
