公开(公告)号：US10756195B2

公开(公告)日：2020-08-25

申请号：US16179250

申请日：2018-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Hoon Lee ,  Hoon-Joo Na ,  Sung-In Suh ,  Min-Woo Song ,  Chan-Hyeong Lee ,  Hu-Yong Lee ,  Sang-Jin Hyun

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/08 ,  H01L21/02 ,  H01L21/30 ,  H01L29/78 ,  H01L21/3205 ,  H01L29/66

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.

公开(公告)号：US09252058B2

公开(公告)日：2016-02-02

申请号：US14308745

申请日：2014-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-Seok Hong ,  Sang-Jin Hyun ,  Hong-Bae Park ,  Hoon-Joo Na ,  Hye-Lan Lee

IPC: H01L21/00 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/823437 ,  H01L21/28008 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping.

Abstract translation: 制造半导体器件的方法，半导体器件和结合其的系统包括掺杂有杂质的栅极金属的晶体管。 晶体管的改变的功函数可以改变晶体管的阈值电压。 在某些实施例中，第一MOSFET的栅极金属掺杂有杂质。 第二MOSFET的栅极金属可以不掺杂，掺杂有不同浓度的相同杂质和/或掺杂有不同杂质。 在一些实施例中，MOSFET是FinFET，并且掺杂可以是共形掺杂。

公开(公告)号：US20140302652A1

公开(公告)日：2014-10-09

申请号：US14308745

申请日：2014-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-Seok Hong ,  Sang-Jin Hyun ,  Hong-Bae Park ,  Hoon-Joo Na ,  Hye-Lan Lee

IPC: H01L21/8234 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/823437 ,  H01L21/28008 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping

Abstract translation: 制造半导体器件的方法，半导体器件和结合其的系统包括掺杂有杂质的栅极金属的晶体管。 晶体管的改变的功函数可以改变晶体管的阈值电压。 在某些实施例中，第一MOSFET的栅极金属掺杂有杂质。 第二MOSFET的栅极金属可以不掺杂，掺杂有不同浓度的相同杂质和/或掺杂有不同杂质。 在一些实施例中，MOSFET是FinFET，并且掺杂可以是共形掺杂