Abstract:
A storage device is provided including an interface circuit configured to receive application information from a host; a field programmable gate array (FPGA); a neural processing unit (NPU); and a central processing unit (CPU) configured to select a hardware image from among a plurality of hardware images stored in a memory using the application information, and reconfigure the FPGA using the selected hardware image. The NPU is configured to perform an operation using the reconfigured FPGA.
Abstract:
An operating method of a memory controller that individually controls a plurality of memory units includes reading respective segments from the plurality of memory units based on a plurality of control signals; generating an output codeword based on the segments; performing error correction decoding on the output codeword; when a result of the error correction decoding indicates success, updating at least one of a plurality of accumulated error pattern information respectively corresponding to the plurality of memory units based on the result of the error correction decoding; and when the result of the error correction decoding indicates failure, regulating at least one of the plurality of control signals based on at least one of the plurality of accumulated error pattern information.
Abstract:
A method of operating a decoder, which has variable nodes and check nodes, includes receiving variable-to-check (V2C) messages from the variable nodes using a first check node among the check nodes. The number of messages having a specific magnitude among the V2C messages is counted. The magnitude of a check-to-variable (C2V) message to be transmitted to a first variable node, among the variable nodes, is determined based on the count value and the magnitude of a V2C message of the first variable node.
Abstract:
A method of processing data using a memory controller includes determining at least one cell state to which each of a plurality of multi-level cells can be changed to based on a current cell state of each multi-level cell, where each multi-level cell includes a plurality of data pages; determining one of the data pages as having a stuck bit when a value of the data page has a single mapping value based on mapping values mapped to the at least one cell state and generating stuck bit data regarding the stuck bit; and encoding write data to be stored in the multi-level cells based on the stuck bit data.
Abstract:
A method of operating a memory controller includes receiving a first data sequence and generating a coset representative sequence that can be divided into m-bit strings, where “m” is a natural number of at least 2; performing a first XOR operation on each of the m-bit strings in the coset representative sequence and binary bits; calculating all possible branch metrics according to a result of the first XOR operation; determining a survivor path sequence based on the all possible branch metrics; and performing a second XOR operation on the coset representative sequence and the survivor path sequence and generating an output sequence.
Abstract:
A flash memory device is provided which includes a plurality of memory cells connected with a word line and including a key cell to store an encryption key; a data input/output circuit configured to receive the encryption key; and key control logic configured to control a program operation on the key cell and to use a column address of the key cell as the encryption key.
Abstract:
A storage device comprises a nonvolatile memory device comprising a plurality of memory cells, and an error correction circuit configured to receive primary data and secondary data from the nonvolatile memory device and to perform a hard decision decoding operation on the primary data and further configured to perform a soft decision decoding operation on the primary data based on the secondary data. The primary data is read from the plurality of memory cells in a hard decision read operation and the secondary data is read from memory cells programmed to a specific state from among the primary data.
Abstract:
A homomorphic encryption operator includes: a level configuration unit configured to set an encryption level by selecting a plurality of prime numbers of different values according to a scale factor condition used for multiplication of a homomorphic encryption operation and an increase/decrease condition for increasing or decreasing consecutively selected prime numbers, and a modular multiplication operator configured to perform lightweight modular multiplication using the selected plurality of prime numbers, wherein the level configuration unit includes: a level constructor configured to select prime number sets whose number have selected Hamming weights, respectively, based on the scale factor condition and the increase/decrease condition, and wherein the level configuration unit is further configured to configure the selected prime number sets with the encryption level using a prime number table.
Abstract:
A memory device includes an input unit configured to receive a plain text and output plain blocks and CTS plain block, a multi-core unit including a plurality of encryption/decryption cores configured to encrypt each of the plain blocks provided from the input unit and output cipher blocks in accordance with control of an encryption/decryption core control unit, a CTS core unit including a CTS core configured to encrypt the CTS plain block provided from the input unit into a CTS cipher block, and an output unit configured to receive the cipher blocks and the CTS cipher block and output a cipher text. The CTS plain block is generated through a CTS calculation based on the plain text.
Abstract:
A storage device includes a nonvolatile memory device that includes a plurality of pages, each of which includes a plurality of memory cells, and a controller that receives first write data expressed by 2m states (m being an integer greater than 1) from an external host device. The controller in a first operating mode shapes the first write data to second write data, which are expressed by “k” states (k being an integer greater than 2) smaller in number than the 2m states, performs first error correction encoding on the second write data to generate third write data expressed by the “k” states, and transmits the third write data to the nonvolatile memory device for writing at a selected page from the plurality of pages.