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    SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE
    11.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE 有权

    公开(公告)号：US20220328303A1

    公开(公告)日：2022-10-13

    申请号：US17851244

    申请日：2022-06-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Suk Lee ,  Jungoo Kang ,  Gihee Cho ,  Sanghyuck Ahn

    IPC: H01L21/02 ,  H01L21/302 ,  H01L21/12 ,  H01L21/768

    Abstract: Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.

    Semiconductor device and method of manufacturing the same
    12.
    发明授权
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：US11411075B2

    公开(公告)日：2022-08-09

    申请号：US17189700

    申请日：2021-03-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gihee Cho ,  Sangyeol Kang ,  Jungoo Kang ,  Taekyun Kim ,  Jiwoon Park ,  Sanghyuck Ahn ,  Jin-Su Lee ,  Hyun-Suk Lee ,  Hongsik Chae

    IPC: H01L49/02 ,  H01L27/108

    Abstract: A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.

    Semiconductor device
    13.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12205952B2

    公开(公告)日：2025-01-21

    申请号：US18539062

    申请日：2023-12-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gihee Cho ,  Sanghyuck Ahn ,  Hyun-Suk Lee ,  Jungoo Kang ,  Jin-Su Lee ,  Hongsik Chae

    IPC: H01L27/10 ,  G11C8/14 ,  H01L49/02 ,  H10B12/00

    Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

    Integrated circuit devices and methods of manufacturing the same
    16.
    发明授权
    Integrated circuit devices and methods of manufacturing the same 有权

    公开(公告)号：US11569344B2

    公开(公告)日：2023-01-31

    申请号：US16798826

    申请日：2020-02-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungoo Kang ,  Hyunsuk Lee ,  Gihee Cho ,  Sanghyuck Ahn

    IPC: H01L49/02 ,  H01G4/12 ,  H01L23/522

    Abstract: An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.

    Capacitor and a semiconductor device including the same
    17.
    发明授权
    Capacitor and a semiconductor device including the same 有权

    公开(公告)号：US09997591B2

    公开(公告)日：2018-06-12

    申请号：US15212299

    申请日：2016-07-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin-su Lee ,  Gihee Cho ,  Dongkyun Park ,  Hyun-Suk Lee ,  Heesook Park ,  Jongmyeong Lee

    IPC: H01L49/02

    CPC classification number: H01L28/75

    Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate and capacitor electrically connected to the substrate. The capacitor includes a lower electrode, a dielectric layer disposed on the lower electrode, and an upper electrode disposed on the dielectric layer. The upper electrode includes a first electrode on the dielectric layer and a second electrode on the first electrode, such that the first electrode is disposed between the dielectric layer and the second electrode. The first electrode contains metal oxynitride having a formula of MxOyNz, in which an atomic ratio (y/x) of oxygen (O) to metallic element (M) is a value in the range from 0.5 to 2.

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