公开(公告)号：US20220037456A1

公开(公告)日：2022-02-03

申请号：US17368721

申请日：2021-07-06

Applicant: Samsung Display Co., Ltd.

Inventor： Geunchul Park ,  Joonseok Park ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a substrate, a first pixel, a second pixel, a first wire set, and a second wire set. The first pixel and the second pixel overlap the substrate and neighbor each other in a first direction. The first wire set extends in a second direction, includes a first conduction line and a first transmission line, and may transfer a first data signal. The first conduction line is positioned between the substrate and the first transmission line and is connected through the first transmission line to the first pixel. The second wire set extends in the second direction, includes a second conduction line and a second transmission line, and may transfer a second data signal. The second conduction line is positioned between the substrate and the second transmission line and electrically connects the second transmission line to the second pixel.

公开(公告)号：US11049929B2

公开(公告)日：2021-06-29

申请号：US16804152

申请日：2020-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L29/78 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L49/02

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US10593808B2

公开(公告)日：2020-03-17

申请号：US16108454

申请日：2018-08-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonseok Park ,  Jihun Lim ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.