THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME
    11.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME 有权
    薄膜晶体管基板,其制造方法和具有该薄膜晶体管的液晶显示面板

    公开(公告)号:US20160133754A1

    公开(公告)日:2016-05-12

    申请号:US14661470

    申请日:2015-03-18

    Abstract: A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer.

    Abstract translation: 薄膜晶体管衬底包括衬底,衬底上的底栅,衬底上的第一绝缘层和底栅,第一绝缘层上的漏极,第一绝缘层上的源,源包括第一绝缘层 漏极的第一侧的源极和在漏极的第二侧的第二源极,在第一绝缘层上的有源层,有源层包括接触漏极和第一源极的第一有源层和与第一源极接触的第二有源层 漏极和第二源极,漏极,源极和有源层上的第二绝缘层,以及第二绝缘层上的顶栅极。

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