Abstract:
A laser irradiation apparatus including a chamber configured to receive a panel including an organic layer on a substrate, a laser oscillator outside the chamber, and configured to irradiate a laser beam onto the panel in the chamber, and a transparent window at a side of the chamber, and configured to allow the laser beam to pass therethrough, wherein the laser beam is configured to remove at least a portion of the organic layer on the substrate.
Abstract:
In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device includes: a silicon layer formed on a substrate; and a thin film transistor (TFT) and an organic light-emitting device that are formed on the silicon layer. The silicon layer comprises a conductive doping silicon portion for forming a part of an active layer included in the TFT and an insulating intrinsic silicon portion surrounding the doping silicon portion. According to the organic light-emitting display device of the present invention, manufacturing costs may be reduced due to a reduction in the number of masks, and the manufacturing process of the organic light-emitting display device may be simplified.
Abstract:
A scan driving device includes: a first node transmitted with a clock signal input to a first clock signal input terminal; a second node transmitted with an input signal according to a clock signal input to a second clock signal input terminal; a first transistor transmitting a power source voltage to an output terminal according to a voltage of the first node; a second transistor formed to transmit the clock signal input to the third clock signal input terminal to the output terminal according to the voltage of the second node; and a dummy transistor formed to transmit the clock signal input to the third clock signal input terminal to the output terminal according to the voltage of the second node. One of the second transistor and the dummy transistor is cut off.
Abstract:
A display apparatus is disclosed. The apparatus includes a plurality of unit pixels each comprising a plurality of sub pixels, a plurality of scan wires, and a plurality of scan lines branching off from each of the scan wires and extending in a first direction. The number of scan lines from each scan wire equals the number of sub pixels for each pixel, and each scan line connects one of the scan wires with one of the sub pixels of each of a plurality of unit pixels. The apparatus also includes a plurality of data lines extending in a second direction orthogonal to the first direction and which are connected to the plurality of sub pixels. The apparatus also includes a first power supply line extending in the second direction and connected to the sub pixels, and a plurality of test pads, each connected to the scan lines of one of the scan wires.
Abstract:
A method of inspecting a short circuit defect between first wires extending in a first direction and a second direction intersecting the first direction and second wires extending in the first or second direction, the method including inspecting a short circuit defect between the first and second wires by using a potential difference monitored only in the second wires.
Abstract:
A thin film transistor substrate includes a substrate including a display area including: pixels and a periphery area where a driver for driving the pixels is disposed; first signal lines connected with the pixels and extended to the periphery area, and including first short-circuit portions provided in the periphery area; second signal lines connected with the pixels and extended to the periphery area by crossing the first signal lines in an insulated manner; first connection members overlapping lateral ends of the first signal lines, disposed in lateral sides with respect to the first short-circuited portions, and formed of a doped semiconductor; and first repairing conductors overlapping the lateral ends of the first signal lines, and disposed in the lateral sides with respect to the first short-circuited portions. Lateral ends of the first connection members are connected with the lateral ends of the first signal lines through contact holes.
Abstract:
A thin film transistor substrate includes a substrate including a display area including pixels and a periphery area where a driver for driving the pixels is disposed; first signal lines connected with the pixels and extended to the periphery area, and including a first short-circuit portion provided in the periphery area; second signal lines connected with the pixels and extended to the periphery area by crossing the first signal lines in an insulated manner; first connection members overlapping lateral ends of the first signal lines, disposed in lateral sides with respect to the first short-circuited portion and formed of a doped semiconductor; and first repairing conductors overlapping the lateral ends of the first signal line, disposed in the lateral sides with respect to the first short-circuited portion. Lateral ends of the first connection member are connected with the lateral ends of the first signal line through contact holes.
Abstract:
A laser irradiation apparatus including a chamber configured to receive a panel including an organic layer on a substrate, a laser oscillator outside the chamber, and configured to irradiate a laser beam onto the panel in the chamber, and a transparent window at a side of the chamber, and configured to allow the laser beam to pass therethrough, wherein the laser beam is configured to remove at least a portion of the organic layer on the substrate.
Abstract:
A thin film transistor and a display apparatus include: a substrate; a plurality of first conductive lines formed on the substrate, each including a main body and a curved portion connected to the main body; a plurality of second conductive lines crossing the curved portions of the first conductive lines; and a plurality of pixel electrodes formed adjacent to the first conductive lines. The plurality of pixel electrodes includes a first pixel electrode disposed toward a side of one first conductive line, and a second pixel electrode disposed toward the other side of the one first conductive line. The display apparatus also includes an intermediate layer connected to the pixel electrodes for displaying images and an opposite electrode formed thereon.
Abstract:
In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device includes: a silicon layer formed on a substrate; and a thin film transistor (TFT) and an organic light-emitting device that are formed on the silicon layer. The silicon layer comprises a conductive doping silicon portion for forming a part of an active layer included in the TFT and an insulating intrinsic silicon portion surrounding the doping silicon portion. According to the organic light-emitting display device of the present invention, manufacturing costs may be reduced due to a reduction in the number of masks, and the manufacturing process of the organic light-emitting display device may be simplified.