Display device and manufacturing method thereof

    公开(公告)号:US10916620B2

    公开(公告)日:2021-02-09

    申请号:US16799296

    申请日:2020-02-24

    Abstract: A display device including: a substrate; an active layer, and including channel and conductive regions and; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device.

    Display device
    13.
    发明授权

    公开(公告)号:US12167652B2

    公开(公告)日:2024-12-10

    申请号:US17689084

    申请日:2022-03-08

    Abstract: A display device includes a driving transistor; a transistor connected to the driving transistor; a first insulating layer; a first data conductive layer including a first connection pattern; a second insulating layer including a lower via hole; a second data conductive layer including a second connection pattern connected to the first connection pattern and a first conductive line; a third insulating layer including an intermediate via hole; a third data conductive layer including a third connection pattern connected to the second connection pattern, a second conductive line extending in a second direction, and a first data line which extends in the second direction; a fourth insulating layer including an upper via hole; and a light emitting element disposed including a first electrode, wherein at least two of the lower via hole, the intermediate via hole, and the upper via hole overlap each other in a third direction.

    Display device
    14.
    发明授权

    公开(公告)号:US12144234B2

    公开(公告)日:2024-11-12

    申请号:US17958301

    申请日:2022-09-30

    Abstract: A display device comprises a substrate including display and peripheral areas, a semiconductor element, a pixel structure, and a plurality of dummy patterns. The semiconductor element is disposed in the display area on the substrate, and the pixel structure is disposed on the semiconductor element. The dummy patterns which have stacked structure are disposed in the peripheral area on the substrate, and contain a material identical to a material constituting the semiconductor element. The dummy patterns are arranged in a grid shape in different layers, and each of the dummy patterns includes a central portion and an edge portion surrounding the central portion. The edge portions of dummy patterns which are adjacent to each other in the different layers among the dummy patterns are overlapped each other in a direction from the substrate to the pixel structure.

    Display panel
    17.
    发明授权

    公开(公告)号:US10580835B2

    公开(公告)日:2020-03-03

    申请号:US16125562

    申请日:2018-09-07

    Abstract: A display panel includes: an active area and a peripheral area adjacent to the active area, wherein the active area includes a display area including a plurality of emitting pixels and a non-display area including a plurality of non-emitting pixels, an emitting pixel of the plurality of emitting pixels includes a light-emitting element, and a non-emitting pixel of the non-emitting pixels does not include any light-emitting element or includes a pseudo-light-emitting element that is not capable of emitting light.

    Display device and manufacturing method thereof

    公开(公告)号:US10453905B2

    公开(公告)日:2019-10-22

    申请号:US15870073

    申请日:2018-01-12

    Abstract: A display device includes a substrate, a switching transistor and a driving transistor positioned on the substrate, a first electrode connected to the driving transistor, a second electrode positioned on the first electrode, and a pixel definition layer positioned between the first electrode and the second electrode, where the pixel definition layer includes a first portion, and a second portion having a thickness less than that of the first portion, where a pixel opening defined in the pixel definition layer is enclosed by the first portion, and the second portion overlaps the first electrode and the second electrode.

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    19.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20140175429A1

    公开(公告)日:2014-06-26

    申请号:US14070886

    申请日:2013-11-04

    CPC classification number: H01L27/1225 H01L27/1214 H01L27/127 H01L27/1288

    Abstract: A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.

    Abstract translation: 薄膜晶体管阵列面板可以包括在半导体层中形成的氧化物半导体的沟道层,形成在半导体层中并连接到第一侧的沟道层的源电极,形成在半导体层中的漏电极和 连接到相对的第二侧的沟道层,形成在与漏电极的半导体层相同的部分中的半导体层中的像素电极,设置在沟道层上的绝缘层,设置在栅电极上的栅极线 绝缘层,设置在源电极和漏电极上的钝化层,像素电极和栅极线以及设置在钝化层上的数据线。 沟道层的宽度可以基本上等于像素电极在与栅极线平行的方向上的宽度。

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