公开(公告)号：US11302771B2

公开(公告)日：2022-04-12

申请号：US16886876

申请日：2020-05-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sunghwan Won ,  Jongmoo Huh ,  Kyumin Kim ,  Doohyun Kim ,  Songhee Kim ,  Jeehoon Kim ,  Shinhyuk Yang

IPC: H01L29/08 ,  H01L27/32

Abstract: A display device includes a substrate including a display area and a peripheral area outside the display area, a thin-film transistor arranged in the display area, a display element arranged in the display area, an interlayer insulating layer covering the thin-film transistor, a conductive layer arranged above the interlayer insulating layer, a first insulating layer covering the conductive layer, a pad arranged in the peripheral area, and a second conductive layer covering a central portion of the pad. The pad is connected to a connection line through a contact hole, and the connection line is arranged on a same first layer as a gate electrode of the thin-film transistor. A side surface of the pad is covered by the first insulating layer or the second conductive layer.

公开(公告)号：US09291870B2

公开(公告)日：2016-03-22

申请号：US14462863

申请日：2014-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Young Jun Shin ,  Jeehoon Kim ,  Sehun Park ,  Jaehwan Oh ,  Guanghai Kim ,  Byoungki Kim ,  Wonkyu Lee

IPC: H01L27/32 ,  H01L29/423 ,  H01L29/417 ,  H01L23/36 ,  G02F1/1362 ,  H01L23/367

CPC classification number: G02F1/136213 ,  G02F1/133385 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L23/3677 ,  H01L27/0211 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor includes a semiconductor pattern on a base substrate, the semiconductor pattern including an input area, an output area, and a channel area between the input area and the output area, a first insulating layer covering the semiconductor pattern, a control electrode on the first insulating layer, the control electrode overlapping the channel area, a second insulating layer covering the control electrode, an input electrode connected to the input area, an output electrode connected to the output area, and a heat discharge electrode on the second insulating layer, the heat discharge electrode being connected to the control electrode.

Abstract translation: 薄膜晶体管包括在基底基板上的半导体图案，所述半导体图案包括输入区域，输出区域和输入区域与输出区域之间的沟道区域，覆盖半导体图案的第一绝缘层，控制电极 在所述第一绝缘层上，所述控制电极与所述沟道区域重叠，覆盖所述控制电极的第二绝缘层，连接到所述输入区域的输入电极，连接到所述输出区域的输出电极，以及所述第二绝缘层上的放热电极 所述放热电极与所述控制电极连接。

公开(公告)号：US20230295501A1

公开(公告)日：2023-09-21

申请号：US18169798

申请日：2023-02-15

Applicant: Samsung Display Co., Ltd. ,  DONGWOO FINE-CHEM Co., Ltd.

Inventor： Shinhyuk Yang ,  Beomsoo Kim ,  Hyeonsu Cho ,  Yujin Kim ,  Jeehoon Kim ,  Youngjin Yoon ,  Eunwon Lee ,  Donghan Kang

IPC: C09K13/06

CPC classification number: C09K13/06

Abstract: An etchant including: persulfate; a fluorine-containing compound; a chlorine-containing compound; a cyclic amine compound; an inorganic acid; sulfate; and water, wherein a tip control index (Y) of the etchant is a value of at least about 45.0 and not more than about 70.0, the tip control index (Y) being a value calculated by Equation 1:


Y=1.0×10−3×M(X1)+1.0×10−1×M(X2)+5.0×10−2×M(X3)+1.5×M(X1)×M(X2)+2.0×10−1×M(X1)×M(X3)+2.0×10−1×M(X2)×M(X3)  Equation 1

The description of Equation 1 is as in the specification.

公开(公告)号：US20230240095A1

公开(公告)日：2023-07-27

申请号：US18153968

申请日：2023-01-12

Applicant: Samsung Display Co., Ltd.

Inventor： Shinhyuk Yang ,  Jeehoon Kim ,  Donghan Kang ,  Junki Lee

IPC: H10K59/12 ,  H10K59/131

CPC classification number: H10K59/1201 ,  H10K59/131

Abstract: A display apparatus includes: a substrate including a display area, and a peripheral area outside the display area; a display element at the display area; and a pad at the peripheral area, the pad including: a first metal layer; a second metal layer on the first metal layer; a first metal oxide layer on the second metal layer, and in surface-contact with the second metal layer; and an oxide conductive layer on the first metal oxide layer, and in surface-contact with the first metal oxide layer.

公开(公告)号：US20220181427A1

公开(公告)日：2022-06-09

申请号：US17447046

申请日：2021-09-07

Applicant: Samsung Display Co., Ltd.

Inventor： Shinhyuk Yang ,  Donghan Kang ,  Soonwook Hong ,  Yujin Kim ,  Jeehoon Kim ,  Hanhee Yoon

IPC: H01L27/32

Abstract: A display apparatus includes: a substrate including a display area, and a peripheral area; and a pad unit at the peripheral area, the pad unit including: a first conductive layer; a second conductive layer on the first conductive layer, and having a first opening; a third conductive layer on the second conductive layer, and having a second opening overlapping with the first opening, the second opening having an area less than an area of the first opening at a top surface of the second conductive layer; an organic protective layer filling the first opening, and having a third opening overlapping with the second opening; and an additional metal layer covering a top surface of the first conductive layer exposed through the first opening, an inner surface of the second opening, an inner surface of the third opening, and a portion of a top surface of the third conductive layer.

公开(公告)号：US10396140B2

公开(公告)日：2019-08-27

申请号：US15427111

申请日：2017-02-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jeehoon Kim ,  Shinhyuk Yang ,  Doohyun Kim ,  Kwangsoo Lee ,  Inyoung Jung

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A thin film transistor includes a substrate and a gate electrode disposed over the substrate. The gate electrode includes a center part and a peripheral part configured to at least partially surround the center part. The thin film transistor further includes a gate insulating layer disposed below the gate electrode and a first electrode insulated from the gate electrode by the gate insulating layer. The first electrode has at least a portion thereof overlapping the center part. The thin film transistor additionally includes a spacer disposed below the first electrode and a second electrode insulated from the first electrode by the spacer. The second electrode has at least a portion thereof overlapping the peripheral part. The thin film transistor further includes a semiconductor layer connected to the first and second electrodes, and insulated from the gate electrode by the gate insulating layer.