公开(公告)号：US20180083084A1

公开(公告)日：2018-03-22

申请号：US15684452

申请日：2017-08-23

Applicant: Samsung Display Co., Ltd.

Inventor： Jaybum KIM ,  Kyoungseok SON ,  Jihun LIM ,  Eoksu KIM ,  Junhyung LIM

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0413 ,  G09G2300/0426 ,  G09G2330/02 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/78675 ,  H01L29/7869 ,  H01L2227/323

Abstract: A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.