公开(公告)号：US20140232419A1

公开(公告)日：2014-08-21

申请号：US14019476

申请日：2013-09-05

Applicant: Samsung Display Co., Ltd.

Inventor： Alexander Voronov ,  Gyoo-Wan Han ,  Ji-Hun Jung

IPC: G01N27/20

CPC classification number: G01N27/20 ,  G01N19/08 ,  G01N21/88 ,  G01N23/18 ,  G01N27/02

Abstract: A method for detecting a defect of a barrier film includes preparing a device including an electrode and a barrier film covering the electrode, allowing a charged medium to contact a surface of the barrier film, and measuring a change in a flow of current between the charged medium and the electrode.

Abstract translation: 用于检测阻挡膜的缺陷的方法包括制备包括电极和覆盖电极的阻挡膜的器件，允许带电介质接触阻挡膜的表面，并测量电荷流动之间的电流流动的变化 介质和电极。

公开(公告)号：US20140097162A1

公开(公告)日：2014-04-10

申请号：US13784724

申请日：2013-03-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Il-Young Jeong ,  Gyoo-Wan Han ,  Jun-Hyung Kim

IPC: B23K26/14 ,  B23K26/08 ,  B23K26/36

CPC classification number: B23K26/142 ,  B23K26/361 ,  B23K26/362

Abstract: A laser processing apparatus using a laser. The laser processing apparatus includes a light source for generating a hollow laser beam in a first direction; a reflection member for changing a path of the hollow laser beam toward the first direction into a second direction toward the substrate; a lens for collecting the hollow laser beam reflected by the reflection member; and an air supply unit for supplying air toward particles generated while the substrate is processed by the hollow laser beam, wherein the lens has a first hole passing through the lens, the reflection member has a second hole passing through the reflection member, and the first and second holes form a discharge path of the particles.

Abstract translation: 一种使用激光的激光加工装置。 激光加工装置包括：用于沿第一方向产生中空激光束的光源; 反射构件，用于将所述中空激光束朝向所述第一方向的路径改变为朝向所述衬底的第二方向; 用于收集由反射构件反射的中空激光束的透镜; 以及空气供给单元，用于向由所述中空激光束处理所述基板时产生的颗粒供给空气，其中，所述透镜具有穿过所述透镜的第一孔，所述反射构件具有穿过所述反射构件的第二孔，并且所述第一 并且第二孔形成颗粒的排出路径。

公开(公告)号：US11693232B2

公开(公告)日：2023-07-04

申请号：US15364594

申请日：2016-11-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Gyoo-Wan Han ,  Ku-Hyun Kang ,  Hae-Sook Lee ,  Jin-Hong Jeun ,  Kyoung-Seok Cho

IPC: G02B26/10 ,  G02B27/10 ,  G02B27/14 ,  G02B27/09 ,  H10K50/824 ,  H10K71/00 ,  G02F1/11 ,  G02B13/00 ,  H10K59/12 ,  H10K59/123

CPC classification number: G02B26/10 ,  G02B27/0927 ,  G02B27/0988 ,  G02B27/10 ,  G02B27/106 ,  G02B27/144 ,  G02F1/113 ,  H10K50/824 ,  H10K71/00 ,  G02B13/0005 ,  H10K59/12 ,  H10K59/1201 ,  H10K59/123

Abstract: A laser beam irradiation apparatus includes a laser light source, a controller for controlling energy of light generated by the laser source, a first optical system for adjusting a shape of light that has passed through the controller, a scanner for adjusting the direction of light that has passed through the first optical system, and an F-theta lens for reducing a beam that has passed through the scanner.

公开(公告)号：US09464991B2

公开(公告)日：2016-10-11

申请号：US14094051

申请日：2013-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Alexander Voronov ,  Suk-Ho Lee ,  Jae-Seung Yoo ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

IPC: G01N21/64 ,  G01N21/95

CPC classification number: G01N21/6489 ,  G01N21/9501

Abstract: A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2.

Abstract translation: 一种用于检查多晶硅层的方法包括：向多晶硅层辐射激发光; 并且检测由激发光产生的光致发光信号，其中激发光的平均功率具有1W / cm 2至10W / cm 2的范围，并且激发光的峰值功率具有100W / cm 2至1000W的范围 / cm2。

公开(公告)号：US09140742B2

公开(公告)日：2015-09-22

申请号：US13766271

申请日：2013-02-13

Applicant: Samsung Display Co., Ltd.

Inventor： Alexander Voronov ,  Seok-Ho Lee ,  Ji-Hunny Jung ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

IPC: G01R31/02 ,  G01R31/26 ,  G01R31/265

CPC classification number: G01R31/26 ,  G01R31/2648 ,  G01R31/265

Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

Abstract translation: 提供了一种测量硅薄膜的导电性的方法。 通过该方法，电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上，当激发光源模块被关闭时，使用电容传感器测量空气隙的尺寸， 通过打开激发光源模块（其中激发光为紫外光），在硅薄膜样品上照射激发光，使用电容式传感器测量硅薄膜样品的电导率变化，并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。

公开(公告)号：US20130265078A1

公开(公告)日：2013-10-10

申请号：US13766271

申请日：2013-02-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Alexander Voronov ,  Seok-Ho Lee ,  Ji-Hunny Jung ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

IPC: G01R31/26

CPC classification number: G01R31/26 ,  G01R31/2648 ,  G01R31/265

Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

Abstract translation: 提供了一种测量硅薄膜的导电性的方法。 通过该方法，电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上，当激发光源模块被关闭时，使用电容传感器测量空气隙的尺寸， 通过打开激发光源模块（其中激发光为紫外光），在硅薄膜样品上照射激发光，使用电容式传感器测量硅薄膜样品的电导率变化，并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。