摘要:
An organic light emitting diode according to an example embodiment of the present disclosure includes: a first electrode; a second electrode facing the first electrode; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer. The electron injection layer includes a first halogen dipole material based on a transition or post-transition metal I, and a second halogen dipole material based on a metal having a work function of 4.0 eV or less.
摘要:
An organic light emitting diode (OLED) display includes: a thin film transistor on the substrate; a first electrode electrically connected to the thin film transistor; a hole injection layer on the first electrode; an emission layer on the hole injection layer; an electron injection layer on the emission layer; a first intermediate layer on the electron injection layer; and a second electrode on the first intermediate layer.
摘要:
An organic light emitting diode includes: a first electrode; a second electrode, the first electrode and the second electrode facing each other; an emission layer provided between the first electrode and the second electrode; and an electron injection layer provided between the second electrode and the emission layer, wherein at least one of the first electrode and the second electrode includes: a first material that is one of a group-1 metal based halogen dipole material, a group-2 metal based halogen dipole material, a lanthanide metal based halogen dipole material, or a transition, metal based halogen dipole material; and a second material that is a metal reacting to the first material.
摘要:
An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminium iodide (AlI3), thorium(IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
摘要:
An organic light emitting diode, including a first electrode; a second electrode facing the first electrode, the second electrode including magnesium; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, the electron injection layer including a dipole material including a first component and a second component having different polarities, the dipole material including halide, and a content of the magnesium included in the second electrode being in a range of from 10 to 40 volume %.
摘要:
An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
摘要:
An organic light emitting diode (OLED) display according to the present disclosure includes a substrate, a thin film transistor on the substrate, a first electrode on the thin film transistor and electrically coupled to the thin film transistor, an organic emission layer on the first electrode, a second electrode on the organic emission layer, and a capping layer on the second electrode, wherein a thickness of the second electrode is about 65 Å to about 125 Å, and wherein a thickness of the capping layer is about (500*1.88/n) Å to about (700*1.88/n) Å, n being an optical constant of the capping layer.
摘要:
An organic light emitting element according to an example embodiment of the present disclosure includes: an anode and a cathode facing each other; an emission layer between the anode and the cathode; an electron transfer layer between the emission layer and the cathode; and a buffer layer between the cathode and the electron transfer layer, wherein the buffer layer includes an inorganic metal halide having p-type semiconductor characteristics.
摘要:
An organic light emitting diode includes: a first electrode and a second electrode that face each other; a middle layer on the first electrode; a hole transport layer on the middle layer; and an emission layer between the hole transport layer and the second electrode, wherein the middle layer includes a bipolar material formed by combining a first material including at least selected from a group 1 element, a group 2 element, a lanthanide metal, with a second material including a halogen element.
摘要:
An organic electroluminescence device according to an embodiment of the present disclosure includes a first electrode, a second electrode, and an emission layer. The emission layer includes host compounds and dopant compounds. The hot compounds include a first host compound represented by Formula 1, and a second host compound represented by Formula 2, and the dopant compounds include an assistant dopant compound represented by Formula 3, and a light-emitting dopant compound represented by Formula 4:
Accordingly, the organic electroluminescence device according to an embodiment may achieve high efficiency and long life.