Abstract:
A display device may include a first substrate, a lower barrier layer disposed on a rear surface of the first substrate, an upper barrier layer disposed on a front surface of the first substrate, a display structure disposed on the upper barrier layer, and a second substrate disposed on the display structure.
Abstract:
A transparent organic light emitting display device may include a transparent base substrate, a semiconductor device disposed on the transparent base substrate, a display structure electrically connected to the semiconductor device, and a protection layer including a blue dye disposed on the display structure. The protection layer may improve the transparency of the transparent base substrate by calibrating discoloration of the transparent base substrate. Thus, the transparent display device including the protection layer may ensure an enhanced transparency. Further, the transparent display device may have an enhanced mechanical strength and an increased heat resistance because of the transparent base substrate.
Abstract:
A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.
Abstract:
A transparent display device including a polymer substrate having colored particles distributed therein, a pixel circuit on the polymer substrate, a first electrode electrically connected to the pixel circuit, a display layer on the first electrode, and a second electrode facing the first electrode and covering the display layer.
Abstract:
A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.
Abstract:
Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.
Abstract:
An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.
Abstract:
A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.
Abstract:
An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.
Abstract:
An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.