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    Touch sensing unit and display device including the same
    12.
    发明授权
    Touch sensing unit and display device including the same 有权

    公开(公告)号：US11698702B2

    公开(公告)日：2023-07-11

    申请号：US17695027

    申请日：2022-03-15

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Gyeong Nam Bang ,  Chang Ho Lee ,  Hye Yun Han ,  Young Bae Jung

    IPC: G06F3/044 ,  G06F3/041 ,  H10K59/40

    CPC classification number: G06F3/0446 ,  G06F3/0416 ,  G06F3/0445 ,  G06F3/0448 ,  H10K59/40 ,  G06F2203/04112

    Abstract: A touch sensing unit, includes a plurality of first sensing electrodes and a plurality of second sensing electrodes intersecting with and insulated from the plurality of first sensing electrodes. The plurality of first sensing electrodes includes a plurality of first sensor portions and a plurality of first connection portions connecting each of the plurality of first sensor portions with one another. The plurality of second sensing electrodes includes a plurality of second sensor portions, a plurality of stem sensors extended from the plurality of second sensor portions, and a plurality of second connection portions connecting each of the plurality of sensor portions with one another. Each of the plurality of first sensor portions includes a plurality of depressions indented inwardly. Each of the plurality of stem sensors is disposed such that it is at least partially surrounded by a respective depression of the plurality of depressions.

    Touch sensing unit and display device including the same
    13.
    发明授权
    Touch sensing unit and display device including the same 有权

    公开(公告)号：US11275476B2

    公开(公告)日：2022-03-15

    申请号：US17148534

    申请日：2021-01-13

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Gyeong Nam Bang ,  Chang Ho Lee ,  Hye Yun Han ,  Young Bae Jung

    IPC: G06F3/044 ,  G06F3/041 ,  H01L27/32

    Abstract: A touch sensing unit, includes a plurality of first sensing electrodes and a plurality of second sensing electrodes intersecting with and insulated from the plurality of first sensing electrodes. The plurality of first sensing electrodes includes a plurality of first sensor portions and a plurality of first connection portions connecting each of the plurality of first sensor portions with one another. The plurality of second sensing electrodes includes a plurality of second sensor portions a plurality of stem sensors extended from the plurality of second sensor portions, and a plurality of second connection portions connecting each of the plurality of sensor portions with one another. Each of the plurality of first sensor portions includes a plurality of depressions indented inwardly. Each of the plurality of stem sensors is disposed such that it is at least partially surrounded by a respective depression of the plurality of depressions.

    Transistor and display device having the same
    15.
    发明授权
    Transistor and display device having the same 有权

    公开(公告)号：US10546959B2

    公开(公告)日：2020-01-28

    申请号：US15662502

    申请日：2017-07-28

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Sung Wook Woo ,  Chang Ho Lee ,  Kyung Lae Rho ,  Doo Hyoung Lee ,  Sung Chan Jo ,  Sang Woo Sohn ,  Sang Won Shin ,  Soo Im Jeong ,  Chang Yong Jeong

    IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/10

    Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

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