公开(公告)号：US11574976B2

公开(公告)日：2023-02-07

申请号：US17469269

申请日：2021-09-08

Applicant: Samsung Display Co., LTD.

Inventor： Youngjae Jeon ,  Woogeun Lee ,  Jong-In Kim ,  Jin-Won Lee

IPC: G09G3/3233 ,  H01L27/32 ,  H01L27/12 ,  G09G3/3266 ,  G09G3/3275

Abstract: A display device includes a driving transistor on a substrate, a light emitting element disposed on the driving transistor, and a lower electrode disposed between the substrate and the driving transistor. The driving transistor includes an active pattern and a gate electrode. The active pattern includes a first region, a second region, and a channel region between the first region and the second region. The light emitting element is electrically connected to the second region of the active pattern. The lower electrode overlaps the channel region of the active pattern and provides a back bias voltage to the driving transistor.

公开(公告)号：US11367766B2

公开(公告)日：2022-06-21

申请号：US16841189

申请日：2020-04-06

Applicant: Samsung Display Co., LTD.

Inventor： Seokhwan Bang ,  Jong-In Kim ,  Kangnam Kim ,  Woogeun Lee ,  Sung-Hoon Lim ,  Soojung Chae

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/56 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

Abstract: An organic light emitting diode display device includes a substrate, an active layer disposed on the substrate and including a metal oxide-based semiconductor, a gate electrode disposed on the active layer, an insulating layer disposed on the gate electrode, source and drain electrodes disposed on the insulating layer, a light emitting element on the source and drain electrodes, and a gate insulating layer between the active layer and the gate electrode. The gate insulating layer includes first and second gate insulating layers. The first gate insulating layer directly contacts the active layer and has a first amount of nitrogen. The second gate insulating layer is disposed on the first gate insulating layer and has a second amount of nitrogen that is different from the first amount of nitrogen.

公开(公告)号：US20220173198A1

公开(公告)日：2022-06-02

申请号：US17402696

申请日：2021-08-16

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Jongin Kim ,  Hyunseong Kang ,  Joongeol Kim ,  Seokhwan Bang ,  Seungsok Son ,  Woogeun Lee ,  Youngjae Jeon ,  Soojung Chae ,  Jiyun Hong

IPC: H01L27/32

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.

公开(公告)号：US20220101775A1

公开(公告)日：2022-03-31

申请号：US17481591

申请日：2021-09-22

Applicant: Samsung Display Co., Ltd.

Inventor： Junhong NA ,  Kangnam Kim ,  Sung-Hoon Lim ,  Woogeun Lee ,  Kyu-Sik Cho

IPC: G09G3/20

Abstract: A gate driving circuit includes a plurality of unit stages connected to each other, wherein each of the plurality of unit stages includes a first transistor having a lower gate electrode, an upper gate electrode disposed on the lower gate electrode, an active layer disposed between the lower gate electrode and the upper gate electrode, a first electrode contacting a first portion of the active layer, and a second electrode contacting a second portion of the active layer, a first capacitor defined by a first region in which the lower gate electrode and the upper gate electrode overlap, and a second capacitor defined by a second region in which the upper gate electrode and the first electrode overlap, wherein the upper gate electrode and the lower gate electrode are electrically coupled to each other in the first region where the upper gate electrode and the lower gate electrode overlap to form the first capacitor.

公开(公告)号：US10797146B2

公开(公告)日：2020-10-06

申请号：US16293560

申请日：2019-03-05

Applicant: Samsung Display Co., Ltd.

Inventor： Seokhwan Bang ,  Soojung Chae ,  Kapsoo Yoon ,  Woogeun Lee ,  Sunghoon Lim

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51

Abstract: A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.