公开(公告)号：US11664386B2

公开(公告)日：2023-05-30

申请号：US16906948

申请日：2020-06-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yeon Keon Moon ,  Tae Sang Kim ,  Joon Seok Park ,  Myoung Hwa Kim ,  Hyung Jun Kim ,  Sang Woo Sohn ,  Hye Lim Choi

IPC: H01L27/14 ,  H01L27/12

CPC classification number: H01L27/1237 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

公开(公告)号：US11521552B2

公开(公告)日：2022-12-06

申请号：US16846195

申请日：2020-04-10

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  So Young Koo ,  Myoung Hwa Kim ,  Eok Su Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L29/78 ,  G09G3/3266 ,  G09G3/3233 ,  G09G3/3291 ,  H01L29/786 ,  H01L29/49 ,  H01L27/32

Abstract: A display device, includes: a pixel connected to a scan line and a data line crossing the scan line, wherein the pixel includes a light emitting element, a driving transistor configured to control a driving current supplied to the light emitting element according to a data voltage received from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal applied to the scan line; wherein the driving transistor includes a first active layer including an oxide semiconductor and a first oxide layer on the first active layer and including an oxide semiconductor; and wherein the first switching transistor includes a second active layer on the first active layer and including the same oxide semiconductor as the first oxide layer.

公开(公告)号：US11251247B2

公开(公告)日：2022-02-15

申请号：US16843764

申请日：2020-04-08

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung Jun Kim ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Yeon Keon Moon ,  Joon Seok Park ,  Sang Woo Sohn ,  Sang Won Shin ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/465 ,  H01L21/4757 ,  H01L27/12

Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).

公开(公告)号：US12068334B2

公开(公告)日：2024-08-20

申请号：US17039474

申请日：2020-09-30

Applicant: Samsung Display Co., LTD.

Inventor： Kyung Jin Jeon ,  Eok Su Kim ,  Joon Seok Park ,  So Young Koo ,  Tae Sang Kim ,  Jun Hyung Lim

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1288 ,  H01L27/1225 ,  H01L27/124

Abstract: According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.

公开(公告)号：US11690273B2

公开(公告)日：2023-06-27

申请号：US17115942

申请日：2020-12-09

Applicant: Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Tae Sang Kim ,  Hyun Jae Kim ,  Hyuk Joon Yoo ,  Jun Hyung Lim

IPC: H10K59/60 ,  H01L31/032 ,  H10K59/12 ,  H10K59/40 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/113 ,  H10K50/844 ,  G06F3/041 ,  H10K50/11

CPC classification number: H10K59/60 ,  H01L31/032 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/1136 ,  H10K50/844 ,  H10K59/12 ,  H10K59/40 ,  G06F3/0412 ,  H10K50/11

Abstract: A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.

公开(公告)号：US11227875B2

公开(公告)日：2022-01-18

申请号：US16836651

申请日：2020-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Hwa Kim ,  Joon Seok Park ,  So Young Koo ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66 ,  G09G3/32 ,  H01L27/32

Abstract: A display device includes a pixel connected to a scan line, and a data line crossing the scan line, wherein the pixel includes a light-emitting element, a driving transistor configured to control a driving current supplied to the light-emitting element according to a data voltage applied from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal that is applied to the scan line. The driving transistor includes a first active layer including an oxide semiconductor, and a first oxide layer disposed on the first active layer and including an oxide semiconductor. The first switching transistor includes a second active layer including an oxide semiconductor, and the first oxide layer is not disposed on the second active layer.

公开(公告)号：US11189677B2

公开(公告)日：2021-11-30

申请号：US16539761

申请日：2019-08-13

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Yeon Keon Moon ,  Kwang Suk Kim ,  Tae Sang Kim ,  Geunchul Park ,  Kyung Jin Jeon

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.

公开(公告)号：US20200286927A1

公开(公告)日：2020-09-10

申请号：US16783002

申请日：2020-02-05

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/12

Abstract: A display device includes a plurality of pixels respectively coupled to scan lines and data lines intersecting the scan lines, wherein at least some of the pixels includes a driving transistor including a substrate, a first insulating layer disposed on the substrate, a first active layer disposed on the first insulating layer, a first gate electrode disposed on the first active layer, and a first source electrode and a first drain electrode electrically connected to the first active layer, the first drain electrode being spaced apart from the first source electrode by a first distance, and a switching transistor including a second gate electrode disposed between the substrate and the first insulating layer, a second active layer disposed on the same layer as the first active layer, and a second source electrode and a second drain electrode electrically connected to the second active layer, the second drain electrode being spaced apart from the second source electrode by a second distance different from the first distance.

公开(公告)号：US09991287B2

公开(公告)日：2018-06-05

申请号：US15478386

申请日：2017-04-04

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Hun Lim ,  Jong Baek Seon ,  Kyoung Seok Son ,  Eok Su Kim ,  Tae Sang Kim

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a substrate; a semiconductor layer disposed on the substrate; a gate electrode disposed on the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer to not overlap the gate electrode, wherein a first edge of the gate electrode is aligned with a second edge of the semiconductor layer in a direction that is perpendicular to the substrate.