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公开(公告)号：US11410602B2
公开(公告)日：2022-08-09
申请号：US17092832
申请日：2020-11-09
Applicant: Samsung Display Co., LTD.
Inventor： Keun Woo Kim , Hye Na Kwak , Doo Na Kim , Han Bit Kim , Yong Su Lee
IPC: G09G3/3233 , G09G3/20 , G09G3/3275 , G09G3/3266
Abstract: A display device includes a driving circuit that drives a pixel, and a display region including the pixel. The pixel includes a light emitting element electrically connected between a first power source and a second power source, a first transistor electrically connected between the first power source and the light emitting element to control a driving current, the first transistor including a first gate electrode electrically connected to a first node, and a second gate electrode electrically connected to a bias control line, and a switching transistor electrically connected between a data line and the first node, the switching transistor including a gate electrode electrically connected to a scan line. The driving circuit varies a control signal provided to the bias control line in a second period based on a first data signal provided to the data line during a first period.
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公开(公告)号：US20210280652A1
公开(公告)日：2021-09-09
申请号：US17062299
申请日：2020-10-02
Applicant: Samsung Display Co., LTD.
Inventor： Keun Woo Kim , Tae Wook Kang , Han Bit Kim , Bum Mo Sung , Do Kyeong Lee , Jae Seob Lee
IPC: H01L27/32
Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.
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公开(公告)号：US12217694B2
公开(公告)日：2025-02-04
申请号：US16849882
申请日：2020-04-15
Applicant: Samsung Display Co., Ltd.
Inventor： Keun Woo Kim , Mee Jae Kang , Doo Na Kim , Yun Jung Oh , Yong Su Lee , Jae Hwan Chu
IPC: G09G3/3266 , G09G3/20 , H01L27/12
Abstract: A display device includes: a plurality of pixels connected to gate lines and data lines; a gate driver to supply a gate signal to the gate lines; and a data driver to supply a data signal to the data lines. The gate driver includes: a first transistor including a first active layer at a first layer; and a second transistor including a second active layer at a second layer on the first layer.
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公开(公告)号：US12159585B2
公开(公告)日：2024-12-03
申请号：US18448817
申请日：2023-08-11
Applicant: Samsung Display Co., LTD.
Inventor： Keun Woo Kim , Hye Na Kwak , Chan Yeob Seol , Bum Mo Sung , Ji Yeong Shin
IPC: G09G3/3233 , G09G3/3291
Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.
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公开(公告)号：US12159576B2
公开(公告)日：2024-12-03
申请号：US17454973
申请日：2021-11-15
Applicant: Samsung Display Co., Ltd.
Inventor： Keun Woo Kim
IPC: G09G3/3233 , G09G3/3225 , G09G3/3241 , G09G3/3266 , G09G3/3275 , H01L27/12 , H01L29/423 , H01L29/786 , H10K59/12 , H10K59/121 , H10K59/131 , H10K71/00
Abstract: A display device includes a first transistor configured to control a driving current flowing from a first electrode to a second electrode according to a voltage applied to a gate electrode of the first transistor, and a second transistor between the second electrode of the first transistor and the gate electrode of the first transistor, the second transistor including a first sub-transistor and a second sub-transistor. A same scan signal is to be transmitted to a gate electrode of the first sub-transistor and a gate electrode of the second sub-transistor. A gate insulating layer of the first sub-transistor includes a first thickness. A gate insulating layer of the second sub-transistor includes a second thickness smaller than the first thickness.
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Patent Agency Ranking
公开(公告)号：US11908871B2
公开(公告)日：2024-02-20
申请号：US17229647
申请日：2021-04-13
Applicant: Samsung Display Co., Ltd.
Inventor： Keun Woo Kim
CPC classification number: H01L27/1218 , G09F9/301 , H01L27/124 , H10K77/111
Abstract: A flexible display device includes: a flexible substrate; a semiconductor layer on the flexible substrate, the semiconductor layer including a polycrystalline semiconductor; a gate insulation layer on the semiconductor layer; and a gate electrode on the gate insulation layer, the gate electrode overlapping a channel region of the semiconductor layer in a plan view, wherein the semiconductor layer includes a source region and a drain region that are at opposite sides of the channel region, wherein the channel region includes a first region contacting the source region and a second region contacting the drain region, and wherein a channel width of the first region is greater than a channel width of the second region.
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公开(公告)号：US11785805B2
公开(公告)日：2023-10-10
申请号：US17246367
申请日：2021-04-30
Applicant: Samsung Display Co., Ltd.
Inventor： Keun Woo Kim , Tae Wook Kang
IPC: G09G3/3233 , H10K59/121 , G09G3/3291 , G09G3/3258 , H10K59/131
CPC classification number: H10K59/1213 , G09G3/3233 , G09G3/3258 , G09G3/3291 , H10K59/1216 , H10K59/131
Abstract: A display device includes: a plurality of pixels on a substrate, each of the plurality of pixels including a light emitting element and a pixel circuit configured to drive the light emitting element, wherein the pixel circuit of each of the plurality of pixels comprises: a first-first transistor configured to control a driving current flowing through the light emitting element based on a voltage of a first node; a first-second transistor connected in series with the first-first transistor and configured to control the driving current based on a voltage of a second node; a second transistor configured to selectively supply a data voltage to a third node which is a first electrode of the first-first transistor; a third-first transistor connected between the first node and a fourth node which is a second electrode of the first-second transistor; and a third-second transistor connected between the second node and the fourth node.
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公开(公告)号：US11552149B2
公开(公告)日：2023-01-10
申请号：US17062299
申请日：2020-10-02
Applicant: Samsung Display Co., LTD.
Inventor： Keun Woo Kim , Tae Wook Kang , Han Bit Kim , Bum Mo Sung , Do Kyeong Lee , Jae Seob Lee
IPC: H01L27/32 , H01L29/66 , H01L27/12 , H01L29/423 , H01L29/786 , H01L21/02
Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.
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公开(公告)号：US11158261B2
公开(公告)日：2021-10-26
申请号：US16852848
申请日：2020-04-20
Applicant: Samsung Display Co., Ltd.
Inventor： Keun Woo Kim , Mee Jae Kang , Hye Na Kwak , Han Bit Kim , Thanh Tien Nguyen , Yong Su Lee , Jae Seob Lee
IPC: G09G3/325 , G09G3/3283 , G09G3/3266
Abstract: A display device includes: a pixel including: a light emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light emitting element to control a driving current, and including a first gate electrode connected to a first node and a second gate electrode connected to a bias control line; and a switching transistor connected between a data line and the first node, and including a gate electrode connected to a scan line; and a driving circuit to drive the pixel according to a driving frequency. The driving circuit drives the pixel in a first mode when the driving frequency is in a first range, and sequentially supplies a control signal having a first voltage and a second voltage to the bias control line during a light emission period of the pixel in the first mode.
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公开(公告)号：US12256571B2
公开(公告)日：2025-03-18
申请号：US18405283
申请日：2024-01-05
Applicant: Samsung Display Co., LTD.
Inventor： Han Bit Kim , Mee Jae Kang , Keun Woo Kim , Doo-Na Kim , Sang Sub Kim , Do Kyeong Lee , Jae Hwan Chu
Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.
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