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公开(公告)号:US20200152723A1
公开(公告)日:2020-05-14
申请号:US16677042
申请日:2019-11-07
Applicant: Samsung Display Co., Ltd.
Inventor: Jongoh SEO , In Cheol KO , Byung Soo SO , Dong-min LEE , Dong-Sung LEE
Abstract: A display device may include a substrate, a first layer on the substrate, the first layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a second layer on the first layer, an active pattern on the second layer, the active pattern overlapping only the first portion of the first layer, a gate electrode on the active pattern, a source electrode and a drain electrode on the gate electrode and connected to the active pattern, a first electrode connected to one of the source electrode and the drain electrode, a pixel defining layer on the first electrode, the pixel defining layer having an opening portion exposing at least a portion of the first electrode, an emission layer in the opening portion on the first electrode, and a second electrode on the emission layer.
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公开(公告)号:US20220173134A1
公开(公告)日:2022-06-02
申请号:US17672574
申请日:2022-02-15
Applicant: Samsung Display Co., Ltd.
Inventor: Dong-min LEE , Ji-Hwan KIM , Jongoh SEO , Byung Soo SO , Dong-Sung LEE , Jonghoon CHOI
Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.
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公开(公告)号:US20220115233A1
公开(公告)日:2022-04-14
申请号:US17559415
申请日:2021-12-22
Applicant: Samsung Display Co., Ltd.
Inventor: Hiroshi OKUMURA , Jongjun BAEK , Dong-Sung LEE
Abstract: A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.
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14.
公开(公告)号:US20210136908A1
公开(公告)日:2021-05-06
申请号:US16937816
申请日:2020-07-24
Applicant: Samsung Display Co., Ltd.
Inventor: Hyunseung SEO , Jihyun KO , Dong-Sung LEE , Changmoo LEE , JONGHWAN CHO
Abstract: A cover window includes a base layer including a first flat portion and a first bending portion bent from a first end of the first flat portion and a coating layer including a first coating portion disposed on the first flat portion and a second coating portion disposed on the first bending portion and having a thickness less than a thickness of the first coating portion. A first end of the second coating portion has a thickness greater than a thickness of a second end of the second coating portion, and the first end of the second coating portion is closer to the first coating portion than the second end of the second coating portion is.
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15.
公开(公告)号:US20190103495A1
公开(公告)日:2019-04-04
申请号:US15948097
申请日:2018-04-09
Applicant: Samsung Display Co., Ltd.
Inventor: Jong Oh SEO , Byung Soo SO , Dong-Min LEE , Dong-Sung LEE
IPC: H01L29/786 , H01L27/12 , H01L29/66 , H01L21/02
CPC classification number: H01L29/78672 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/02691 , H01L27/1218 , H01L27/1281 , H01L29/6675
Abstract: A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.
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