公开(公告)号：US09847370B2

公开(公告)日：2017-12-19

申请号：US15274790

申请日：2016-09-23

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L29/36

CPC分类号： H01L27/14698 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/1464 ,  H01L27/14687 ,  H01L29/36

摘要： The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

公开(公告)号：US20160181313A1

公开(公告)日：2016-06-23

申请号：US14442373

申请日：2013-11-11

申请人： Sumco Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/322 ,  H01L29/36 ,  H01L21/02 ,  H01L21/265 ,  H01L29/167

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/14689 ,  H01L29/167 ,  H01L29/36

摘要： Provided is a semiconductor epitaxial wafer having metal contamination reduced by achieving higher gettering capability, a method of producing the semiconductor epitaxial wafer, and a method of producing a solid-state image sensing device using the semiconductor epitaxial wafer. The method of producing a semiconductor epitaxial wafer 100 includes a first step of irradiating a semiconductor wafer 10 containing at least one of carbon and nitrogen with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion of the semiconductor wafer 10; and a second step of forming a first epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

摘要翻译： 提供了通过实现更高的吸杂能力而减少金属污染的半导体外延晶片，制造半导体外延晶片的方法以及使用该半导体外延晶片的固态图像感测装置的制造方法。 制造半导体外延晶片100的方法包括：第一步骤，将含有碳和氮的至少一个的半导体晶片10照射到簇离子16，从而形成由包含的簇离子16的构成元素形成的改性层18 固溶体，在半导体晶片10的表面部分中; 以及在半导体晶片10的改性层18上形成第一外延层20的第二步骤。

公开(公告)号：US20160181312A1

公开(公告)日：2016-06-23

申请号：US14442367

申请日：2013-11-12

申请人： Sumco Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/322 ,  H01L21/02 ,  H01L21/265

CPC分类号： H01L27/14687 ,  C23C16/0209 ,  C23C16/0263 ,  C23C16/24 ,  C30B25/20 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/3221 ,  H01L27/14683 ,  H01L27/14689

摘要： An object is to provide a method of producing a semiconductor epitaxial wafer having higher gettering capability and a reduced haze level of the surface of a semiconductor epitaxial layer.The method of producing a semiconductor epitaxial wafer, according to the present invention includes: a first step of irradiating a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion 10A of the semiconductor wafer; a second step of performing heat treatment for crystallinity recovery on the semiconductor wafer 10 after the first step such that the haze level of the semiconductor wafer surface portion 10A is 0.20 ppm or less; and a third step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer after the second step.

摘要翻译： 本发明的目的是提供一种制造具有较高吸杂能力和半导体外延层的表面的较低雾度水平的半导体外延晶片的方法。 根据本发明的制造半导体外延晶片的方法包括：第一步骤，用聚簇离子16照射半导体晶片10，从而形成由作为固溶体的簇离子16的构成元素形成的改性层18 在半导体晶片的表面部分10A中; 在第一步骤之后对半导体晶片10进行结晶度恢复的热处理使得半导体晶片表面部分10A的雾度水平为0.20ppm以下的第二步骤; 以及在第二步骤之后在半导体晶片的改性层18上形成外延层20的第三步骤。