发明申请
US20160181313A1 METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
审中-公开
生产半导体外延波长的方法，半导体外延波形以及制造固态图像感测装置的方法
- 专利标题： METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
- 专利标题（中）： 生产半导体外延波长的方法，半导体外延波形以及制造固态图像感测装置的方法
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申请号： US14442373申请日： 2013-11-11
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公开(公告)号： US20160181313A1公开(公告)日： 2016-06-23
- 发明人: Takeshi Kadono , Kazunari Kurita
- 申请人： Sumco Corporation
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： SUMCO CORPORATION
- 当前专利权人： SUMCO CORPORATION
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2012249335 20121112
- 国际申请： PCT/JP2013/006629 WO 20131111
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L21/322 ; H01L29/36 ; H01L21/02 ; H01L21/265 ; H01L29/167
摘要：
Provided is a semiconductor epitaxial wafer having metal contamination reduced by achieving higher gettering capability, a method of producing the semiconductor epitaxial wafer, and a method of producing a solid-state image sensing device using the semiconductor epitaxial wafer. The method of producing a semiconductor epitaxial wafer 100 includes a first step of irradiating a semiconductor wafer 10 containing at least one of carbon and nitrogen with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion of the semiconductor wafer 10; and a second step of forming a first epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.
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