公开(公告)号：US20220190022A1

公开(公告)日：2022-06-16

申请号：US17686077

申请日：2022-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN JANG ,  JUNGCHAK AHN ,  JUNSUNG PARK ,  YOUNGGU JIN

IPC: H01L27/146

Abstract: An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.

公开(公告)号：US20200279881A1

公开(公告)日：2020-09-03

申请号：US16592840

申请日：2019-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGGU JIN ,  YOUNGCHAN KIM ,  YONGHUN KWON ,  MOOSUP LIM ,  TAESUB JUNG

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a polarizer array and a depth pixel array. The polarizer array may include first to fourth unit pixels, which are arranged in a first direction and a second direction crossing each other, and may include polarization gratings respectively provided in the first to fourth unit pixels. The polarization gratings of the first to fourth unit pixels may have polarization directions different from each other. The depth pixel array may include depth pixels corresponding to the first to fourth unit pixels, respectively. Each of the depth pixels may include a photoelectric conversion device and first and second readout circuits, which are connected in common to the photoelectric conversion device.

公开(公告)号：US20180040656A1

公开(公告)日：2018-02-08

申请号：US15668736

申请日：2017-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN JANG ,  JUNGCHAK AHN ,  JUNSUNG PARK ,  YOUNGGU JIN

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14685

Abstract: An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.

公开(公告)号：US20170069672A1

公开(公告)日：2017-03-09

申请号：US15258812

申请日：2016-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGGU JIN ,  Jungchak Ahn

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14643

Abstract: An image sensor includes a photoelectric conversion portion providing a recessed region, a transfer gate provided in the recessed region, and a floating diffusion region adjacent the transfer gate. The transfer gate includes a first pattern and a second pattern, which are sequentially stacked in the recessed region and have different conductivity types from each other.

Abstract translation: 图像传感器包括提供凹陷区域的光电转换部分，设置在凹陷区域中的传输门，以及与传输门相邻的浮动扩散区域。 传输门包括第一图案和第二图案，其顺序地堆叠在凹陷区域中并具有彼此不同的导电类型。