知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

38 records (took 0.026 seconds)

    QUANTUM DOT DEVICE AND ELECTRONIC DEVICE
    12.
    发明公开
    QUANTUM DOT DEVICE AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240224564A1

    公开(公告)日：2024-07-04

    申请号：US18512352

    申请日：2023-11-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Won Sik YOON ,  Ju Hyun KIM ,  Ha Il KWON ,  Kwang Hee KIM ,  Taehyung KIM ,  Su Jin PARK ,  Dae Young CHUNG

    IPC: H10K50/115 ,  H10K50/15 ,  H10K50/16

    CPC classification number: H10K50/115 ,  H10K50/156 ,  H10K50/16

    Abstract: A quantum dot device including an anode and a cathode, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, a first hole auxiliary layer disposed on the anode, the first hole auxiliary layer including poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate or a derivative thereof (PEDOT:PSS), a second hole auxiliary layer disposed on the first hole auxiliary layer and including a hole transport material different from the PEDOT:PSS, wherein the light emitting layer is disposed on the second hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface includes a surface modification region including a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. An electronic device that includes the quantum dot device.

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
    14.
    发明公开
    LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240074222A1

    公开(公告)日：2024-02-29

    申请号：US18240451

    申请日：2023-08-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Oul CHO ,  Kwanghee KIM ,  Yuho WON ,  Jae Yong LEE ,  Taehyung KIM

    IPC: H10K50/115 ,  C09K11/56 ,  C09K11/88 ,  H10K50/16

    CPC classification number: H10K50/115 ,  C09K11/565 ,  C09K11/883 ,  H10K50/16 ,  H10K2102/331

    Abstract: An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.

    SEMICONDUCTOR DEVICE
    16.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210193657A1

    公开(公告)日：2021-06-24

    申请号：US16910385

    申请日：2020-06-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taehyung KIM ,  Panjae PARK ,  Jaeseok YANG

    IPC: H01L27/092 ,  H01L23/528 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238

    Abstract: A semiconductor device includes a substrate with a first active region; first and second active patterns extending in a first direction and spaced apart in a second direction, and each having a source pattern, a channel pattern, and a drain pattern that are sequentially stacked; first and second gate electrodes that surround the channel patterns of the first and second active patterns and extend in the first direction; an interlayer dielectric layer that covers the first and second active patterns and the first and second gate electrodes; a first active contact that penetrates the interlayer dielectric layer and is coupled to the first active region between the first and second active patterns; and a first power rail on the interlayer dielectric layer and electrically connected to the first active contact, each of the first and second active patterns including an overlapping region that vertically overlaps the first power rail.

    ELECTRONIC DEVICE AND SCREEN SHARING METHOD OF ELECTRONIC DEVICE
    17.
    发明申请
    ELECTRONIC DEVICE AND SCREEN SHARING METHOD OF ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20200057589A1

    公开(公告)日：2020-02-20

    申请号：US16497960

    申请日：2018-03-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Donghyun JO ,  Taehyung KIM ,  Jinbong RYU ,  Myeongseok LEE ,  Sanghun LEE ,  Donghyun YEOM

    IPC: G06F3/14 ,  G06F3/041 ,  H04L29/08

    Abstract: An electronic device comprises a communication module, a display, a processor, and a memory, wherein the memory can control the communication module such that the processor performs a communication connection for screen sharing with an external electronic device, can acquire display information of the external electronic device from the external electronic device, can generate one or more pieces of transmission screen information on the basis of at least the display information of the electronic device or the display information of the external electronic device, and can determine the resolution or the screen ratio of the transmission screen information on the basis of at least the screen ratio of the external electronic device.

    APPARATUS AND METHOD OF CONTROLLING VOICE INPUT IN ELECTRONIC DEVICE SUPPORTING VOICE RECOGNITION
    18.
    发明申请
    APPARATUS AND METHOD OF CONTROLLING VOICE INPUT IN ELECTRONIC DEVICE SUPPORTING VOICE RECOGNITION 有权
    控制语音输入的装置和方法支持语音识别的电子设备

    公开(公告)号：US20150032457A1

    公开(公告)日：2015-01-29

    申请号：US14341001

    申请日：2014-07-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngdae KOO ,  Taehyung KIM ,  Howon JUNG

    IPC: G10L25/48 ,  G10L15/00

    CPC classification number: G06F3/167 ,  G06F3/165 ,  G10L15/00

    Abstract: A method of controlling a voice input of a terminal supporting a voice recognition function is provided. The method includes controlling a microphone to be in a turn-off state during operation of a voice recognition mode; detecting a first user input for requesting turn-on of the microphone based on at least one of a touch input, a touch pen input, and a key input; controlling the microphone in the turn-off state to be in a turn-on state when the first user input is detected; collecting voice input data of a user through the microphone in the turn-on state; and controlling the microphone in the turn-on state to be in the turn-off state when a second user input for requesting the turn-off of the microphone is detected, and terminating collecting the voice input data.

    Abstract translation: 提供了一种控制支持语音识别功能的终端的语音输入的方法。 该方法包括在语音识别模式的操作期间控制麦克风处于关断状态; 基于触摸输入，触摸笔输入和键输入中的至少一个，检测用于请求麦克风接通的第一用户输入; 当检测到第一用户输入时，控制处于关闭状态的麦克风处于开启状态; 在打开状态下通过麦克风收集用户的语音输入数据; 并且当检测到用于请求关闭麦克风的第二用户输入时，将接通状态下的麦克风控制在关断状态，并且终止收集语音输入数据。

    FAULT DETECTION AND CLASSIFICATION DEVICE, PROCESS MANAGEMENT SYSTEM INCLUDING THE SAME, AND METHOD OF RECOMMENDING OPTIMAL OPERATING RANGE
    19.
    发明申请
    FAULT DETECTION AND CLASSIFICATION DEVICE, PROCESS MANAGEMENT SYSTEM INCLUDING THE SAME, AND METHOD OF RECOMMENDING OPTIMAL OPERATING RANGE 有权

    公开(公告)号：US20250155885A1

    公开(公告)日：2025-05-15

    申请号：US18751782

    申请日：2024-06-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taehyung KIM ,  Byeongseop KIM ,  Yeonjoong KIM ,  Juyeon YUN ,  Yoolee LIM

    IPC: G05B23/02

    Abstract: A process management system includes a fault detection and classification (FDC) module that analyzes a trend of sensor data of an equipment or a facility, classifies the sensor data as a type according to the trend, calculates specification data according to the type, and selects optimal specification data by verifying the specification data, and a user interface module that displays the optimal specification data, a simulation result, and an increase/decrease in an interlock before/after changing to the optimal specification data, and a storage that stores the sensor data, the specification data, and the optimal specification data. The sensor data is state information measured by a sensor mounted on the equipment or the facility, the specification data includes an upper control limit (UCL) and/or a lower control limit (LCL), and when the sensor data exceeds the UCL or the LCL, the interlock is applied to the equipment or the facility.

    INTEGRATED CIRCUIT INCLUDING POWER GATING SWITCH
    20.
    发明申请
    INTEGRATED CIRCUIT INCLUDING POWER GATING SWITCH 有权

    公开(公告)号：US20250079310A1

    公开(公告)日：2025-03-06

    申请号：US18806236

    申请日：2024-08-15

    Applicant: SAMSUNG ELECTRONICS CO.,LTD.

    Inventor： Hoyoung TANG ,  Taehyung KIM

    IPC: H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    Abstract: An integrated circuit includes: a backside wiring layer on a back side of a substrate, the backside wiring layer including a first backside pattern and a second backside pattern isolated from each other; and a power gating switch on a front side of the substrate, the power gating switch connected to the first and second backside patterns. The power gating switch includes: a first source/drain region connected to the first backside pattern, and configured to receive a first supply voltage from the first backside pattern; a gate line structure configured to receive a power gating signal; and a second source/drain region connected to the second backside pattern, and configured to receive a power signal from the first source/drain region based on the power gating signal.

Patent Agency Ranking