公开(公告)号：US20230422497A1

公开(公告)日：2023-12-28

申请号：US18464668

申请日：2023-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngwoo Kim ,  Dawoon Jeong ,  Tak Lee ,  Jungmin Lee

IPC: H10B41/27 ,  H10B41/10 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B41/27 ,  H10B41/10 ,  H10B43/10 ,  H10B43/27

Abstract: A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.

公开(公告)号：US10825832B2

公开(公告)日：2020-11-03

申请号：US16780999

申请日：2020-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Mo Gu ,  Kyeong Jin Park ,  Hyun Mog Park ,  Byoung Il Lee ,  Tak Lee ,  Jun Ho Cha

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11548 ,  H01L27/11524 ,  H01L27/1157

Abstract: A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.

公开(公告)号：US10566346B2

公开(公告)日：2020-02-18

申请号：US16108834

申请日：2018-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tak Lee ,  Su Bin Kang ,  Ji Mo Gu ,  Yu Jin Seo ,  Byoung Il Lee ,  Jun Ho Cha

IPC: H01L27/11578 ,  H01L27/11582 ,  H01L27/11568 ,  H01L29/10 ,  H01L29/423 ,  H01L21/285 ,  H01L27/11565 ,  H01L21/02 ,  H01L21/311 ,  H01L21/28

Abstract: A vertical-type memory device includes a substrate having a cell array region and a connection region disposed adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region, a plurality of channel structures disposed in the cell array region, a plurality of dummy channel structures disposed in the connection region, and a plurality of slits disposed in the plurality of gate electrode layers in the cell array region. The plurality of gate electrode layers forms a stepped structure in the connection region, the plurality of channel structures penetrates the plurality of gate electrode layers, and the plurality of dummy channel structures penetrates at least one of the plurality of gate electrode layers.

公开(公告)号：US10553605B2

公开(公告)日：2020-02-04

申请号：US15933695

申请日：2018-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Mo Gu ,  Kyeong Jin Park ,  Hyun Mog Park ,  Byoung Il Lee ,  Tak Lee ,  Jun Ho Cha

IPC: H01L27/11582 ,  H01L27/11575 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11565

Abstract: A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.

公开(公告)号：US20190355736A1

公开(公告)日：2019-11-21

申请号：US16227822

申请日：2018-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SU BIN KANG ,  Byoung Il Lee ,  Ji Mo Gu ,  Yu Jin Seo ,  Tak Lee

IPC: H01L27/11565 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of gate electrodes. The semiconductor device further includes a first structure disposed on the substrate and passing through the stacked structure, and a second structure disposed on the substrate. The second structure is disposed outside of the stacked structure, faces the first structure, and is spaced apart from the first structure. The first structure includes a plurality of separation lines passing through at least a portion of the plurality of gate electrodes and extending outside of the stacked structure, and the second structure is formed of the same material as the first structure.

公开(公告)号：US20190019807A1

公开(公告)日：2019-01-17

申请号：US15933695

申请日：2018-03-23

Applicant: Samsung Electronics Co, Ltd

Inventor： JI MO GU ,  Kyeong Jin Park ,  Hyun Mog Park ,  Byoung ll Lee ,  Tak Lee ,  Jun Ho Cha

IPC: H01L27/11582 ,  H01L27/11575 ,  H01L27/11556 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11524

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575

Abstract: A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.