公开(公告)号：US20240021427A1

公开(公告)日：2024-01-18

申请号：US18201251

申请日：2023-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin Park ,  Hanjin Lim ,  Jaesoon Lim ,  Hyungsuk Jung

IPC: H01L21/02 ,  H01L21/324 ,  C23C16/04 ,  C23C16/56

CPC classification number: H01L21/02205 ,  H01L21/0228 ,  H01L21/324 ,  H01L21/022 ,  C23C16/04 ,  C23C16/56 ,  H01L21/02112

Abstract: A method of forming a thin film is provided, the method including: an operation of supplying a precursor to a substrate, to selectively adsorb the precursor to a partial region of a surface of the substrate; an operation of performing a region-selective annealing by irradiating microwaves onto the substrate; and an operation of supplying a reactant to react with the precursor adsorbed on the substrate to form a thin film unit layer, wherein the microwave irradiated onto the substrate induces vibrations in at least a portion of the precursor so that the partial region of the surface of the substrate on which the precursor is adsorbed is locally heated.

公开(公告)号：US20230225112A1

公开(公告)日：2023-07-13

申请号：US17949356

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younglim Park ,  Jimin Chae ,  Chanhoon Park ,  Dongmin Shin ,  Jaesoon Lim ,  Intak Jeon

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/91

Abstract: A semiconductor device including a substrate, lower electrodes disposed on the substrate, at least one support layer in contact with the lower electrodes, a dielectric layer disposed on the lower electrodes, an upper electrode disposed on the dielectric layer, a first interfacial film between the lower electrodes and the dielectric layer, and a second interfacial film between the upper electrode and the dielectric layer. At least one of the first and second interfacial films includes a plurality of layers, wherein the plurality of layers include a first metal element, and a second metal element, and at least one of oxygen \and nitrogen. The lower electrodes include the first metal element. A first region of the first interfacial film includes the second metal element at a first concentration and a second region of the first interfacial film includes the second metal element at a second concentration different from the first concentration.

公开(公告)号：US11332486B2

公开(公告)日：2022-05-17

申请号：US16564125

申请日：2019-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  ADEKA CORPORATION

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  C23C16/20 ,  H01L21/02

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.