公开(公告)号：US20230232606A1

公开(公告)日：2023-07-20

申请号：US17950185

申请日：2022-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak Jeon ,  Younglim Park

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10852 ,  H01L27/10814 ,  H01L28/75

Abstract: A semiconductor device of the disclosure includes a substrate, a capacitor contact structure electrically connected to the substrate, a lower electrode connected to the capacitor contact structure, a capacitor insulating layer covering the lower electrode, and an upper electrode covering the capacitor insulating layer. The upper electrode includes a multiple layer on the capacitor insulating layer, and a cover layer on the multiple layer. The multiple layer includes a first electrode layer, a second electrode layer, and a first metal silicide layer between the first and second electrode layers. A work function of the first metal silicide layer is greater than a work function of the first electrode layer and a work function of the second electrode layer.

公开(公告)号：US20220033962A1

公开(公告)日：2022-02-03

申请号：US17195900

申请日：2021-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suhwan Kim ,  Hyunjun Kim ,  Younglim Park ,  Dongkwan Baek ,  Hyungsuk Jung

IPC: C23C16/02 ,  C23C16/448 ,  C23C16/44 ,  C23C16/52

Abstract: A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.

公开(公告)号：US11784213B2

公开(公告)日：2023-10-10

申请号：US17315947

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungmin Park ,  Hanjin Lim ,  Haeryong Kim ,  Younglim Park ,  Cheoljin Cho

IPC: H01L49/02

CPC classification number: H01L28/60

Abstract: An integrated circuit device including a first electrode layer including a first metal and having a first thermal expansion coefficient; a dielectric layer on the first electrode layer, the dielectric layer including a second metal oxide including a second metal that is different from the first metal, and having a second thermal expansion coefficient that is less than the first thermal expansion coefficient; and a first stress buffer layer between the first electrode layer and the dielectric layer, the first stress buffer layer including a first metal oxide including the first metal, and being formed due to thermal stress of the first electrode layer and thermal stress of the dielectric layer.

公开(公告)号：US20240209495A1

公开(公告)日：2024-06-27

申请号：US18425048

申请日：2024-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suhwan Kim ,  Hyunjun Kim ,  Younglim Park ,  Dongkwan Baek ,  Hyungsuk Jung

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

CPC classification number: C23C16/0245 ,  C23C16/4412 ,  C23C16/4482 ,  C23C16/52

Abstract: A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.

公开(公告)号：US20230225112A1

公开(公告)日：2023-07-13

申请号：US17949356

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younglim Park ,  Jimin Chae ,  Chanhoon Park ,  Dongmin Shin ,  Jaesoon Lim ,  Intak Jeon

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/91

Abstract: A semiconductor device including a substrate, lower electrodes disposed on the substrate, at least one support layer in contact with the lower electrodes, a dielectric layer disposed on the lower electrodes, an upper electrode disposed on the dielectric layer, a first interfacial film between the lower electrodes and the dielectric layer, and a second interfacial film between the upper electrode and the dielectric layer. At least one of the first and second interfacial films includes a plurality of layers, wherein the plurality of layers include a first metal element, and a second metal element, and at least one of oxygen \and nitrogen. The lower electrodes include the first metal element. A first region of the first interfacial film includes the second metal element at a first concentration and a second region of the first interfacial film includes the second metal element at a second concentration different from the first concentration.