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公开(公告)号：US10008272B2
公开(公告)日：2018-06-26
申请号：US15587461
申请日：2017-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hee-Woong Kang , Donghun Kwak , Daeseok Byeon , Ju Seok Lee
CPC classification number: G11C16/16 , G11C11/5635 , G11C16/0483 , G11C16/08 , G11C16/3445
Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller that controls the nonvolatile memory device. The nonvolatile memory device includes multiple memory blocks. Each of the memory blocks includes memory cells. Each of the memory cells has any one of an erase state and one of multiple different program states. An operation method of the nonvolatile memory system includes receiving a physical erase command from an external device. The operation method also includes performing a fast erase operation, responsive to the received physical erase command, with respect to at least one memory block so that first memory cells of the at least one memory block have a fast erase state different from the erase state.
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公开(公告)号：US09606864B2
公开(公告)日：2017-03-28
申请号：US13947219
申请日：2013-07-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung-Yeon Lee , Hee-Woong Kang , Jong-Nam Baek , San Song
CPC classification number: G06F11/1068 , G11C11/5642 , G11C16/26 , G11C16/3431
Abstract: A nonvolatile memory device includes a memory cell array including a selected page including multiple error correction code (ECC) units, and a voltage generation unit configured to generate a read voltage to read data from the selected page. Read voltage levels are set individually for the respective ECC units according to data detection results for each of the ECC units. During a read retry section performed with respect to selected ECC units of the selected page for which read errors have been detected, a re-read operation of the selected ECC units is performed according to the respective read voltage levels set for the selected ECC units.
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