公开(公告)号：US20220406808A1

公开(公告)日：2022-12-22

申请号：US17724002

申请日：2022-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin LEE ,  Junhee LIM ,  Hakseon KIM ,  Nakjin SON ,  Jeongeun KIM ,  Juseong MIN ,  Changheon LEE

IPC: H01L27/11573 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582

Abstract: A semiconductor device includes a lower level layer including a peripheral circuit; and an upper level layer provided on the lower level layer, the upper level layer including a vertically-extended memory cell string, wherein the lower level layer includes a first substrate; a device isolation layer defining a first active region of the first substrate; and a first gate structure including a first gate insulating pattern, a first conductive pattern, a first metal pattern, and a first capping pattern, which are sequentially stacked on the first active region, wherein the first conductive pattern comprises a doped semiconductor material, and the device isolation layer covers a first side surface of the first conductive pattern, and the first metal pattern includes a first body portion on the first conductive pattern.

公开(公告)号：US20250140536A1

公开(公告)日：2025-05-01

申请号：US19009252

申请日：2025-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

Abstract: A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.

公开(公告)号：US20240319594A1

公开(公告)日：2024-09-26

申请号：US18493192

申请日：2023-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanjae AHN ,  Cheol KANG ,  Minsang KIM ,  Beomseok KIM ,  Changki KIM ,  Hana KIM ,  Hyeran KIM ,  Changheon LEE ,  Sungwon CHOI ,  Hyunseok CHOI

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/18 ,  G03F7/038

CPC classification number: G03F7/039 ,  C08F212/24 ,  C08F212/28 ,  C08F220/1806 ,  C08F220/1807 ,  G03F7/038

Abstract: Provided are a resist composition and a pattern forming method using the same. The resist composition includes a polymer including a first repeating unit repeating unit Formula 1, a photoacid generator, and an organic solvent.




In Formula 1, L11 to L13, a11 to a13, A11 to A13, R11 to R14, b12 to b14, and p are the same as described in the detailed description.

公开(公告)号：US20240231225A1

公开(公告)日：2024-07-11

申请号：US18325465

申请日：2023-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Youngmin NAM ,  Chanjae AHN ,  Changheon LEE ,  Kyuhyun IM ,  Sungwon CHOI ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0044 ,  G03F7/2004 ,  G03F7/32

Abstract: Provided are a resist composition and a pattern forming method using the same. The resist composition may include an organometallic compound represented by Formula 1 below and a polymer repeating unit represented by Formula 2 below.




In Formulas 1 and 2, descriptions of M11, R11, R12, n, A21, L21 to L24, a21 to a24, R21, R22, b22, p, and X21 refer to the specification.

公开(公告)号：US20220351947A1

公开(公告)日：2022-11-03

申请号：US17548775

申请日：2021-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuihyun YOON ,  Sang Ki NAM ,  Kwonsang SEO ,  Sungho JANG ,  Jungmin KO ,  Nam Kyun KIM ,  Tae-Hyun KIM ,  Seunghan BAEK ,  Seungbin AHN ,  Jungmo YANG ,  Changheon LEE ,  Kangmin JEON

IPC: H01J37/32

Abstract: A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.