公开(公告)号：US08994083B2

公开(公告)日：2015-03-31

申请号：US13541447

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/062 ,  H01L31/0216 ,  H01L27/146 ,  H01L31/0232

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US07294873B2

公开(公告)日：2007-11-13

申请号：US10192409

申请日：2002-07-10

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L27/148

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的X-Y地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧。 并且从硅层的另一侧即从与布线层相反的一侧（背面）吸收可见光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US09455293B2

公开(公告)日：2016-09-27

申请号：US11981467

申请日：2007-10-30

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US08604575B2

公开(公告)日：2013-12-10

申请号：US11981389

申请日：2007-10-30

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/0232

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US08519460B2

公开(公告)日：2013-08-27

申请号：US13396266

申请日：2012-02-14

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/102 ,  H01L31/107

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US20120267691A1

公开(公告)日：2012-10-25

申请号：US13541428

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/102

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US20120175719A1

公开(公告)日：2012-07-12

申请号：US13396266

申请日：2012-02-14

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/0232

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US07592644B2

公开(公告)日：2009-09-22

申请号：US10940554

申请日：2004-09-14

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/0328

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US20050029561A1

公开(公告)日：2005-02-10

申请号：US10940553

申请日：2004-09-14

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L27/146 ,  H01L27/01 ,  H01L27/15 ,  H01L31/10 ,  H04N5/335 ,  H04N5/374 ,  H01L31/062

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US20110102620A1

公开(公告)日：2011-05-05

申请号：US12910068

申请日：2010-10-22

申请人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

发明人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

IPC分类号： H04N5/228 ,  H01L31/06 ,  H01L31/18 ,  H03F3/08 ,  H01L27/146

CPC分类号： H04N5/361 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/2176 ,  H04N5/374 ,  H04N5/37457 ,  H04N5/378

摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

摘要翻译： 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。