Abstract:
A device includes a multi-mode low noise amplifier (LNA) having a first amplifier stage, and a second amplifier stage coupled to the first amplifier stage, the second amplifier stage having a plurality of amplification paths configured to amplify a plurality of carrier frequencies, the first amplifier stage configured to bypass the second amplifier stage when the first amplifier stage is configured to amplify a single carrier frequency.
Abstract:
A device includes a load circuit configured to receive an amplified communication signal, the load circuit having a center tapped inductor structure configured to divide the amplified communication signal into a first portion and a second portion, the load circuit configured to resonate at a harmonic of the amplified communication signal.
Abstract:
A device includes, a reconfigurable baseband filter configured to receive a communication signal having a first carrier and a second carrier, the first carrier and the second carrier having non-contiguous respective frequencies, the reconfigurable baseband filter having a first filter portion and a second filter portion, the first filter portion and the second filter portion each comprising respective first and second amplification stages, and a plurality of switches associated with the first filter portion and the second filter portion, the plurality of switches for configuring the reconfigurable baseband filter into a plurality of sub-filters, each configured to generate at least one of a low pass filter output and a bandpass filter output.
Abstract:
Omni-band amplifiers supporting multiple band groups are disclosed. In an exemplary design, an apparatus (e.g., a wireless device, an integrated circuit, etc.) includes at least one gain transistor and a plurality of cascode transistors for a plurality of band groups. Each band group covers a plurality of bands. The gain transistor(s) receive an input radio frequency (RF) signal. The cascode transistors are coupled to the gain transistor(s) and provide an output RF signal for one of the plurality of band groups. In an exemplary design, the gain transistor(s) include a plurality of gain transistors for the plurality of band groups. One gain transistor and one cascode transistor are enabled to amplify the input RF signal and provide the output RF signal for the selected band group. The gain transistors may be coupled to different taps of a single source degeneration inductor or to different source degeneration inductors.