公开(公告)号：US20190181178A1

公开(公告)日：2019-06-13

申请号：US16174156

申请日：2018-10-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASAYUKI TAKASE ,  YUUKO TOMEKAWA ,  YOSHIHIRO SATO

IPC: H01L27/146 ,  H04N5/363 ,  H04N5/3745 ,  H01L49/02

Abstract: An image capture device includes pixels and a signal line that is arranged across two or more of the pixels. Each pixel includes: a semiconductor substrate, a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a first transistor including first and second impurity regions in the substrate; a wiring layer between the substrate and the second electrode; and a capacitor arranged between the wiring layer and the substrate in a normal direction of the substrate and including a third electrode, a fourth electrode between the third electrode and the substrate, and a dielectric layer. The first impurity region is electrically connected to the second electrode, the fourth electrode is electrically connected to one of the first and second impurity regions, and at least either the third or fourth electrodes covers the first impurity region when viewed along the normal direction.

公开(公告)号：US20190035832A1

公开(公告)日：2019-01-31

申请号：US16034328

申请日：2018-07-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KYOSUKE KOBINATA ,  SANSHIRO SHISHIDO ,  YOSHIHIRO SATO

IPC: H01L27/146 ,  H01L31/0224

CPC classification number: H01L27/14605 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L31/022408 ,  H04N5/353 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging device includes: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including first and second electrodes and a first photoelectric conversion layer between the first and second electrodes, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including a second photoelectric converter above the semiconductor substrate, including third and fourth electrodes and a second photoelectric conversion layer between the third and fourth electrodes, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode. An area of the second electrode is greater than an area of the fourth electrode, and both the first charge accumulation region and the second charge accumulation region overlap with the second electrode in plan view.

公开(公告)号：US20180331140A1

公开(公告)日：2018-11-15

申请号：US15955748

申请日：2018-04-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/363

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/363 ,  H04N5/3745

Abstract: An imaging device includes: a semiconductor substrate; pixels arranged thereon; and a signal line through which a signal from a pixel is transferred. the pixel includes a photoelectric converter generating a charge, a region accumulating the charge, an amplification transistor having a gate electrically connected to the region, a first capacitor having a first terminal electrically connected to the region and a second terminal, a second capacitor having a third terminal electrically connected to the second terminal and a fourth terminal supplied with a voltage, a feedback transistor a source or a drain of which is electrically connected to the second terminal, and a feedback circuit forming a path through which an output from the amplification transistor is negatively fed back to the region. A part, which is from the feedback transistor to the first capacitor, of the path is closer to the semiconductor substrate than the signal line is.

公开(公告)号：US20170250216A1

公开(公告)日：2017-08-31

申请号：US15418662

申请日：2017-01-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  JUNJI HIRASE

IPC: H01L27/146

CPC classification number: H01L27/14665 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/307

Abstract: An imaging device includes a unit pixel cell including: a semiconductor substrate including a first region exposed to a surface of the semiconductor substrate in a first area, and a second region directly adjacent to the first region and exposed to the surface in a second area; a photoelectric converter; a contact plug connected to the second region; a first transistor including the second region as one of a source and a drain, a first electrode covering a first portion of the first area, and a first insulation layer between the first electrode and the semiconductor substrate; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When seen in a direction perpendicular to the surface, a contact between the second region and the contact plug is located between the first electrode and the second electrode.

公开(公告)号：US20250056912A1

公开(公告)日：2025-02-13

申请号：US18931126

申请日：2024-10-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO

IPC: H01L27/146 ,  H04N25/65 ,  H04N25/77

Abstract: A second cell is less sensitive than a first cell. The first cell includes a first charge accumulator and a first wire. The first charge accumulator accumulates first signal charge and is electrically connected to a first node. The first wire is located within an upper wiring layer and is electrically connected to the first node. The second cell includes a second charge accumulator and a second wire. The second charge accumulator accumulates second signal charge and is electrically connected to a second node. The second wire is located within the upper wiring layer and is electrically connected to the second node. In the upper wiring layer, a shortest distance between the first wire and wires is greater than a shortest distance between the second wire and the wires.

公开(公告)号：US20240306407A1

公开(公告)日：2024-09-12

申请号：US18661367

申请日：2024-05-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SOGO OTA ,  YOSHIHIRO SATO

IPC: H10K39/32 ,  H10K39/38

CPC classification number: H10K39/32 ,  H10K39/38

Abstract: An imaging device includes pixels and pixel electrodes. Each of the pixels includes a semiconductor substrate, a photoelectric conversion layer, and a corresponding pixel electrode out of the pixel electrodes. The photoelectric conversion layer converts light into electric charges. The corresponding pixel electrode collects the electric charges. A pitch of the pixel electrodes is greater than a pitch of the pixels.

公开(公告)号：US20230403479A1

公开(公告)日：2023-12-14

申请号：US18452612

申请日：2023-08-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  TAKAYUKI NISHITANI

IPC: H04N25/65 ,  H10K39/32 ,  H04N25/709 ,  H04N25/77

CPC classification number: H04N25/65 ,  H10K39/32 ,  H04N25/709 ,  H04N25/77

Abstract: An imaging device includes a semiconductor substrate and a first transistor provided on the semiconductor substrate and including a first gate electrode, a source, and a drain. The semiconductor substrate includes a first well region of a second conductivity type, a second well region of a first conductivity type different from the second conductivity type, a first impurity region of the first conductivity type, the first impurity region being positioned in the first well region, being one of the source and the drain, holding charges generated by photoelectric conversion, and being electrically connected to the first gate electrode, and a second impurity region of the second conductivity type, the second impurity region being positioned in the second well region and electrically connected to the other of the source and the drain.

公开(公告)号：US20230215882A1

公开(公告)日：2023-07-06

申请号：US18183227

申请日：2023-03-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIDENARI KANEHARA ,  YOSHIHIRO SATO ,  TAKAYOSHI YAMADA ,  AKIO NAKAJUN

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14636 ,  H01L27/14627

Abstract: An imaging device includes a counter electrode, a photoelectric conversion layer that converts light into a signal charge, a plurality of sets of electrodes each of which collects the signal charge, each of the plurality of sets including a first electrode included in a high-sensitivity pixel and a second electrode included in a low-sensitivity pixel, and an auxiliary electrode which is located, as seen in plan view, between the first electrode and the second electrode in each of the plurality of sets and which is commonly included in the high-sensitivity pixel and the low-sensitivity pixel. The distance between the first electrode and the auxiliary electrode is different from the distance between the second electrode and the auxiliary electrode.

公开(公告)号：US20230079616A1

公开(公告)日：2023-03-16

申请号：US18055408

申请日：2022-11-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO

IPC: H01L27/146 ,  H01L27/148

Abstract: An imaging apparatus includes a substrate, a first electrode, a second electrode, a photoelectric conversion layer, a first transistor, and a penetrating electrode. The photoelectric conversion layer is located between the first electrode and the second electrode and converts light into charges. The first transistor includes a first impurity region serving as one of a source and a drain, a second impurity region serving as the other of the source and the drain, and a first gate electrode. The penetrating electrode penetrates the substrate and electrically connects the first electrode to the first impurity region. The charges are accumulated in the first impurity region. A distance between the first impurity region and the penetrating electrode is longer in a plan view than a distance between the second impurity region and the penetrating electrode.

公开(公告)号：US20220208811A1

公开(公告)日：2022-06-30

申请号：US17695747

申请日：2022-03-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  TAKAYOSHI YAMADA

IPC: H01L27/146 ,  H01L27/30 ,  H04N5/3745 ,  H04N5/369

Abstract: An imaging device includes a pixel. The pixel includes a charge accumulator containing an impurity of a first conductivity type, a first transistor, a second transistor, a first well region containing an impurity of a second conductivity type, and a second well region containing an impurity of the first conductivity type. The charge accumulator accumulates charge generated through photoelectric conversion. The first transistor includes a first gate electrode and a first diffusion region containing an impurity of the first conductivity type. The second transistor includes a second gate electrode and a second diffusion region containing an impurity of the second conductivity type. The first transistor and the charge accumulator are located in the first well region, and the second transistor is located in the second well region. A distance between the charge accumulator and the second transistor is larger than a distance between the charge accumulator and the first transistor.