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公开(公告)号：US09653510B2
公开(公告)日：2017-05-16
申请号：US14554450
申请日：2014-11-26
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/3745
CPC classification number: H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N5/3698 , H04N5/3745
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US12177585B2
公开(公告)日：2024-12-24
申请号：US18212037
申请日：2023-06-20
Inventor： Motonori Ishii , Yoshiyuki Matsunaga , Yutaka Hirose
IPC: H04N25/65 , H04N25/75 , H04N25/767 , H04N25/77
Abstract: An imaging device including a photoelectric converter that generates signal charge; a charge storage region that stores the signal charge; a first transistor that has a gate coupled to the charge storage region and reads out the signal charge; a second transistor that has a source and a drain, an output of the first transistor being fed back to one of the source and the drain and being supplied to the charge storage region from the other of the source and the drain; and voltage supply circuitry that supplies voltages varying with time. In a reset operation for discharging the signal charge stored in the charge storage region, the voltage supply circuitry supplies the voltages to a gate of the second transistor.
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公开(公告)号：US12120448B2
公开(公告)日：2024-10-15
申请号：US17683465
申请日：2022-03-01
Inventor： Shota Yamada , Motonori Ishii , Shigetaka Kasuga , Masato Takemoto , Yutaka Hirose
IPC: H04N25/778 , H04N25/60 , H04N25/772
CPC classification number: H04N25/778 , H04N25/60 , H04N25/772
Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a signal processing part configured to process a detection signal outputted from each of the pixel cells. The pixel cells each include an avalanche photodiode and output a voltage corresponding to a count number of photons received by the avalanche photodiode as the detection signal. The signal processing part includes a variation calculation part configured to calculate a variation between the pixel cells in the detection signal outputted from each of the pixel cells, and a correction calculation part configured to correct the detection signal outputted from each of the pixel cells, on the basis of the variation calculated by the variation calculation part.
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公开(公告)号：US11988750B2
公开(公告)日：2024-05-21
申请号：US17482365
申请日：2021-09-22
Inventor： Shigeru Saitou , Shinzo Koyama , Motonori Ishii , Masato Takemoto
IPC: G01S17/89 , G01S17/10 , G01S17/894 , G06T7/11
CPC classification number: G01S17/894 , G01S17/10 , G06T7/11
Abstract: A distance measurement device includes: an image capturer that captures N segmental images corresponding to N segmental distances into which a distance measurement range is divided; and a range image generator that generates a range image from the N segmental images. The range image generator determines: among segmental pixels included in the N segmental images, a segmental pixel having a maximum signal value from N segmental pixels at the same pixel position among pixel positions; a value indicating a segmental distance of the segmental pixel having the maximum signal value to be a distance value of the pixel position of the range image, when the maximum signal value is greater than or equal to a threshold; and a value indicating a value outside the distance measurement range to be the distance value of the pixel position of the range image, when the maximum signal value is less than the threshold.
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公开(公告)号：US10897590B2
公开(公告)日：2021-01-19
申请号：US16178396
申请日：2018-11-01
Inventor： Motonori Ishii , Yoshiyuki Matsunaga , Yutaka Hirose
IPC: H01L27/00 , H04N5/363 , H04N5/3745 , H04N5/374 , H04N5/378
Abstract: An imaging device includes a photoelectric converter generating signal charge; a charge storage region storing the signal charge; a first transistor having a gate coupled to the charge storage region; a second transistor having a source and a drain; and voltage supply circuitry supplying voltages varying with time. An output of the first transistor is fed back to the second transistor and is supplied to the charge storage region. A reset operation for discharging the signal charge in the charge storage region includes a first reset operation and a second reset operation. In the first reset operation, the second transistor changes from an OFF state to an ON state and then changes to an OFF state. In the second reset operation, the voltage supply circuitry supplies the voltages to a gate of the second transistor so that the second transistor gradually changes from an OFF state to an ON state.
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Patent Agency Ranking
公开(公告)号：US10103181B2
公开(公告)日：2018-10-16
申请号：US15487941
申请日：2017-04-14
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/369 , H04N5/3745
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US09319609B2
公开(公告)日：2016-04-19
申请号：US14578560
申请日：2014-12-22
Inventor： Shigetaka Kasuga , Motonori Ishii
IPC: H04N5/335 , H04N5/3745 , H04N5/363 , H04N5/378 , H01L27/146
CPC classification number: H04N5/3745 , H01L27/14643 , H04N5/363 , H04N5/378
Abstract: A pixel unit included in a sensor chip includes: a first pixel connected to a first feedback amplifier which is connected to a first column signal line as an input line and a first reset drain line as an output line; and a second pixel connected to a second feedback amplifier which is connected to a second column signal line as an input line and a second reset drain line as an output line. A drain of a reset transistor of the first pixel is connected to the first reset drain line, a drain of a reset transistor of the second pixel is connected to the second reset drain line, a source of an amplifying transistor of the first pixel is connected to the first column signal line, and a source of an amplifying transistor of the second pixel is connected to the second column signal line.
Abstract translation: 包括在传感器芯片中的像素单元包括：连接到第一反馈放大器的第一像素，其连接到作为输入线的第一列信号线和作为输出线的第一复位漏极线; 以及连接到第二反馈放大器的第二像素，其连接到作为输入线的第二列信号线和作为输出线的第二复位漏极线。 第一像素的复位晶体管的漏极连接到第一复位漏极线，第二像素的复位晶体管的漏极连接到第二复位漏极线，第一像素的放大晶体管的源极连接 到第一列信号线，并且第二像素的放大晶体管的源极连接到第二列信号线。
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18.发明授权公开(公告)号：US12013459B2
公开(公告)日：2024-06-18
申请号：US16981587
申请日：2019-03-06
Inventor： Shigeru Saitou , Motonori Ishii , Masato Takemoto , Shinzo Koyama
CPC classification number: G01S17/10 , G01S7/4816 , G01S7/4868 , G01S17/18 , G01S17/89 , G01S7/4873
Abstract: A distance measuring device is to be connected to a wave transmitter and a wave receiver. The distance measuring device includes a distance measuring unit, which calculates a distance to the target based on a time interval between transmission of a measuring wave from a wave transmitter and reception of the measuring wave at a wave receiver. The target may be present across a preceding distance range and a succeeding distance range which are continuous with each other and both of which belong to a plurality of distance ranges defined by dividing a measurable distance range. In such a situation, the distance measuring unit calculates the distance to the target based on respective amounts of a preceding wave received at the wave receiver over a period corresponding to the preceding distance range and a succeeding wave received at the wave receiver over a period corresponding to the succeeding distance range.
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19.发明授权公开(公告)号：US12007478B2
公开(公告)日：2024-06-11
申请号：US16982405
申请日：2019-03-14
Inventor： Hiroshi Koshida , Shinzo Koyama , Motonori Ishii , Shigetaka Kasuga
IPC: G01C3/08 , G01S7/481 , G01S7/4865 , G01S17/10 , G01S17/89
CPC classification number: G01S17/10 , G01S7/4816 , G01S7/4865 , G01S17/89
Abstract: A distance measuring device is to be connected to a wave transmission module to transmit a measuring wave and a wave reception module including a first wave receiver and a second wave receiver, both of which receive the measuring wave reflected from a target. In this distance measuring device, a first wave reception period in which the first wave receiver receives the measuring wave and a second wave reception period in which the second wave receiver receives the measuring wave overlap with each other on a time axis. In addition, in this distance measuring device, a time lag is provided between respective beginning times of the first and second wave reception periods. The time lag is shorter than either the first wave reception period or the second wave reception period.
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公开(公告)号：US11605656B2
公开(公告)日：2023-03-14
申请号：US17025620
申请日：2020-09-18
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/3745 , H04N5/369
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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