公开(公告)号：US20220005854A1

公开(公告)日：2022-01-06

申请号：US17479847

申请日：2021-09-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akito INOUE

IPC: H01L27/146

Abstract: A photodetector includes a first APD that is sensitive to incident light and a second APD through which a constant current flows regardless of the incident light. One terminal of the first APD is electrically connected to one terminal of the second APD, another terminal of the first APD and another terminal of the second APD are connected to different power supplies, respectively, and the one terminal of the first APD and the one terminal of the second APD are both anodes or cathodes.

公开(公告)号：US20230299114A1

公开(公告)日：2023-09-21

申请号：US18325709

申请日：2023-05-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akito INOUE ,  Yutaka HIROSE

IPC: H01L27/146 ,  G01S7/481

CPC classification number: H01L27/14645 ,  H01L27/14636 ,  H01L27/14616 ,  G01S7/4816

Abstract: A photodetector includes: a single-photon avalanche diode (SPAD); and a first resistor connected in series to the SPAD. In a recharge period in which an electric charge is discharged from the SPAD via the first resistor, an electric charge disappears from a multiplication region in the SPAD.

公开(公告)号：US20220014701A1

公开(公告)日：2022-01-13

申请号：US17486495

申请日：2021-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tatsuya KABE ,  Hideyuki ARAI ,  Hisashi AIKAWA ,  Yuki SUGIURA ,  Akito INOUE ,  Mitsuyoshi MORI ,  Kentaro NAKANISHI ,  Yusuke SAKATA

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/374

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

公开(公告)号：US20220005848A1

公开(公告)日：2022-01-06

申请号：US17479835

申请日：2021-09-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akito INOUE ,  Yuki SUGIURA ,  Yutaka HIROSE

IPC: H01L27/146

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

公开(公告)号：US20210176413A1

公开(公告)日：2021-06-10

申请号：US17183213

申请日：2021-02-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akito INOUE ,  Yutaka HIROSE ,  Seiji YAMAHIRA

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/369

Abstract: The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.

公开(公告)号：US20210028202A1

公开(公告)日：2021-01-28

申请号：US17039128

申请日：2020-09-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akito INOUE ,  Yuki SUGIURA ,  Yutaka HIROSE

IPC: H01L27/146

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.