公开(公告)号：US20200373282A1

公开(公告)日：2020-11-26

申请号：US16990998

申请日：2020-08-11

Applicant: PlayNitride Inc.

Inventor： Ying-Tsang Liu ,  Yu-Chu Li ,  Pei-Hsin Chen ,  Yi-Ching Chen

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/38 ,  H01L23/00 ,  H01L25/16

Abstract: A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 μm to 30 μm.

公开(公告)号：US10763302B2

公开(公告)日：2020-09-01

申请号：US16192623

申请日：2018-11-15

Applicant: PLAYNITRIDE INC.

Inventor： Kuan-Yung Liao ,  Yun-Li Li ,  Yu-Chu Li ,  Chih-Ling Wu ,  Ching-Liang Lin ,  Pai-Yang Tsai

IPC: H01L29/18 ,  H01L33/00 ,  H01L27/15 ,  G09G3/32 ,  H01L25/075

Abstract: A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

公开(公告)号：US20190073944A1

公开(公告)日：2019-03-07

申请号：US16121634

申请日：2018-09-05

Applicant: PlayNitride Inc.

Inventor： Yu-Chu Li

IPC: G09G3/32 ,  H01L25/075 ,  H01L27/15 ,  G09G3/20

Abstract: A micro light emitting diode display panel including a plurality of pixels and a control element is provided. One of the pixels include a first sub-pixel. The first sub-pixel includes two micro light emitting diodes having different light wavelengths and controlled independently. The control element controls driving currents to the two micro light emitting diodes according to a gray level of the first sub-pixel, wherein a ratio of the driving current of the micro light emitting diode with larger light wavelength to the driving current of the micro light emitting diode with smaller light wavelength increases as the gray level of the first sub-pixel increases. A driving method of the micro light emitting diode display panel is also provided.

公开(公告)号：US20190043844A1

公开(公告)日：2019-02-07

申请号：US16053779

申请日：2018-08-02

Applicant: PlayNitride Inc.

Inventor： Ying-Tsang Liu ,  Yu-Chu Li ,  Pei-Hsin Chen ,  Yi-Ching Chen

IPC: H01L25/16 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L25/0753 ,  H01L33/62

Abstract: A micro light emitting diode display panel including a substrate, a plurality of control elements, and a plurality of light emitting units is provided. The control elements and the light emitting units are disposed on the substrate. Each of the light emitting units is electrically connected to one of the control elements, and each of the light emitting units includes a plurality of micro light emitting diodes. The micro light emitting diodes at least have a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. A shortest distance between the green micro light emitting diode and the one of the control elements is less than a shortest distance between the blue micro light emitting diode and the one of the control elements.

公开(公告)号：US20210225817A1

公开(公告)日：2021-07-22

申请号：US17224053

申请日：2021-04-06

Applicant: PlayNitride Inc.

Inventor： Kuan-Yung Liao ,  Ching-Liang Lin ,  Yun-Li Li ,  Yu-Chu Li

IPC: H01L25/075 ,  H01L25/16 ,  H01L33/62

Abstract: A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.

公开(公告)号：US10916682B2

公开(公告)日：2021-02-09

申请号：US16658174

申请日：2019-10-21

Applicant: PlayNitride Inc.

Inventor： Yun-Li Li ,  Yu-Chu Li ,  Pei-Hsin Chen

IPC: H01L33/38 ,  H01L25/075 ,  H01L25/16

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a current commanding structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The first type pad is disposed on the epitaxial structure and electrically connected to the first type semiconductor layer. The current commanding structure is disposed on the epitaxial structure and electrically connected to the second type semiconductor layer. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer. The insulating layer contacts a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer. The insulating layer has an opening exposing at least a portion of the portion of the current commanding structure.

公开(公告)号：US20200052160A1

公开(公告)日：2020-02-13

申请号：US16658174

申请日：2019-10-21

Applicant: PlayNitride Inc.

Inventor： Yun-Li Li ,  Yu-Chu Li ,  Pei-Hsin Chen

IPC: H01L33/38 ,  H01L25/075 ,  H01L25/16

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a current commanding structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The first type pad is disposed on the epitaxial structure and electrically connected to the first type semiconductor layer. The current commanding structure is disposed on the epitaxial structure and electrically connected to the second type semiconductor layer. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer. The insulating layer contacts a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer. The insulating layer has an opening exposing at least a portion of the portion of the current commanding structure.

公开(公告)号：US10396062B2

公开(公告)日：2019-08-27

申请号：US16053779

申请日：2018-08-02

Applicant: PlayNitride Inc.

Inventor： Ying-Tsang Liu ,  Yu-Chu Li ,  Pei-Hsin Chen ,  Yi-Ching Chen

IPC: H01L25/16 ,  H01L25/075 ,  H01L33/62

Abstract: A micro light emitting diode display panel including a substrate, a plurality of control elements, and a plurality of light emitting units is provided. The control elements and the light emitting units are disposed on the substrate. Each of the light emitting units is electrically connected to one of the control elements, and each of the light emitting units includes a plurality of micro light emitting diodes. The micro light emitting diodes at least have a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. A shortest distance between the green micro light emitting diode and the one of the control elements is less than a shortest distance between the blue micro light emitting diode and the one of the control elements.

公开(公告)号：US20190019928A1

公开(公告)日：2019-01-17

申请号：US15867722

申请日：2018-01-11

Applicant: PlayNitride Inc.

Inventor： Yun-Li Li ,  Yu-Chu Li ,  Pei-Hsin Chen

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/44 ,  H01L25/075 ,  H01L27/12

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a second type pad, and a current commanding structure. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer. The first type pad is electrically connected to the first type semiconductor layer. The second type pad is electrically connected to the second type semiconductor layer. The current commanding structure is disposed between the second type semiconductor layer and the second type pad. A contact resistance between the second type semiconductor layer and the current commanding structure is smaller than a contact resistance between the second type semiconductor layer and the second type pad. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than an orthogonal projection area of the second type pad on the second type semiconductor layer.

公开(公告)号：US20170141262A1

公开(公告)日：2017-05-18

申请号：US15175789

申请日：2016-06-07

Applicant: PlayNitride Inc.

Inventor： Shen-Jie Wang ,  Yu-Chu Li ,  Ching-Liang Lin

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/04

CPC classification number: H01L33/12 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

Abstract: A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0