公开(公告)号：US20190131210A1

公开(公告)日：2019-05-02

申请号：US15951235

申请日：2018-04-12

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Yuji SATO

IPC: H01L23/433 ,  H01L23/00 ,  H02M7/5387

Abstract: A semiconductor module includes: a semiconductor device having an upper surface electrode; a conductor plate joined to the upper surface electrode via a bonding member; and a wire bonded to the conductor plate, wherein the wire is a metal thread or a ribbon bond, and the bonding member is a porous sintered metal material impregnated with resin.

公开(公告)号：US20250054830A1

公开(公告)日：2025-02-13

申请号：US18632211

申请日：2024-04-10

Applicant: Mitsubishi Electric Corporation

Inventor： Riki KAJIYAMA ,  Taketoshi SHIKANO ,  Kotaro NISHIHARA ,  Yasunari HINO ,  Akira KOSUGI ,  Kazuhiro NISHIMURA ,  Kiyoshi ARAI

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/00 ,  H01L23/373 ,  H01L23/498

Abstract: An insulating substrate has an insulating plate, an obverse metal pattern, and a reverse metal pattern. A semiconductor chip is mounted on the obverse metal pattern of the insulating substrate. A main terminal is joined to a main electrode on an upper surface of the semiconductor chip. A signal terminal is connected to a control electrode on the upper surface of the semiconductor chip by a wire. A sealing resin seals the insulating substrate, the semiconductor chip, the wire, and a part of the main terminal and a part of the signal termina. The reverse metal pattern protrudes from a lower surface of the sealing resin. A side surface and a lower surface of the reverse metal pattern are exposed from the sealing resin. An exposed surface of the reverse metal pattern is modified and hardened. The reverse metal pattern has a convex shape which bulges downward.

公开(公告)号：US20240395678A1

公开(公告)日：2024-11-28

申请号：US18323600

申请日：2023-05-25

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Kiyoshi ARAI ,  Taketoshi SHIKANO

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/367 ,  H01L23/373 ,  H02M1/08

Abstract: A semiconductor device with improved reliability and a power conversion device including the semiconductor device are provided. A semiconductor device includes a semiconductor element, a first heat dissipation substrate, a second heat dissipation substrate, and a heat dissipation block. The semiconductor element has an electrode. The semiconductor element is mounted on the first heat dissipation substrate. The heat dissipation block is disposed to be opposed to the electrode. The second heat dissipation substrate is disposed on a side opposite to the electrode as viewed from the heat dissipation block. The bonding material covers a side surface of the heat dissipation block and is in contact with the electrode of the semiconductor element and the second heat dissipation substrate.

公开(公告)号：US20170178995A1

公开(公告)日：2017-06-22

申请号：US15234524

申请日：2016-08-11

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Kiyoshi ARAI

IPC: H01L23/367 ,  H01L25/11 ,  H01L21/48 ,  H01L25/00 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/3675 ,  H01L21/4875 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5283 ,  H01L23/53228 ,  H01L25/115 ,  H01L25/50 ,  H01L2224/40137 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

公开(公告)号：US20160322327A1

公开(公告)日：2016-11-03

申请号：US14959139

申请日：2015-12-04

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Daisuke KAWABATA

IPC: H01L23/00

CPC classification number: H01L24/83 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/2711 ,  H01L2224/27334 ,  H01L2224/27505 ,  H01L2224/27848 ,  H01L2224/29013 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29294 ,  H01L2224/29347 ,  H01L2224/2957 ,  H01L2224/2969 ,  H01L2224/32054 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/48175 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/82203 ,  H01L2224/83192 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/83986 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor clement. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.

Abstract translation: 根据本发明的半导体器件的制造方法包括：（a）在基板（绝缘基板）上设置具有片状且具有烧结性的接合材料; （b）在（a）之后，在所述接合材料上设置半导体元件; 和（c）在对基板和半导体元件之间的接合材料施加压力的同时烧结接合材料。 接合材料包括Ag或Cu的颗粒，并且颗粒被有机膜涂覆。

公开(公告)号：US20150130076A1

公开(公告)日：2015-05-14

申请号：US14445411

申请日：2014-07-29

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO

IPC: H01L23/522

CPC classification number: H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/33 ,  H01L24/45 ,  H01L24/83 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/29101 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/8384 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/2076 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor module of the present invention includes: a semiconductor element having a first main surface and a second main surface facing the first main surface, the semiconductor element including a front surface electrode and a back surface electrode on the first main surface and the second main surface, respectively; a metal plate electrically connected to the back surface electrode of the semiconductor element through a sintered bonding material including metal nanoparticles; and a plate-shaped conductor electrically connected to the front surface electrode of the semiconductor element through the sintered bonding material including the metal nanoparticles. The metal plate and the conductor include grooves communicating between a bonding region bonded to the semiconductor element and the outside of the bonding region.

Abstract translation: 本发明的半导体模块包括：具有第一主表面和面向第一主表面的第二主表面的半导体元件，所述半导体元件包括在第一主表面和第二主表面上的前表面电极和后表面电极 表面; 通过包含金属纳米粒子的烧结接合材料与半导体元件的背面电极电连接的金属板; 以及通过包含金属纳米粒子的烧结接合材料与半导体元件的前表面电极电连接的板状导体。 金属板和导体包括在结合到半导体元件的接合区域和接合区域的外部之间连通的沟槽。