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47 条记录 (耗时 0.021 秒)

    Ge-Cr Alloy Sputtering Target
    13.
    发明申请
    Ge-Cr Alloy Sputtering Target 审中-公开
    Ge-Cr合金溅射靶

    公开(公告)号：US20110036710A1

    公开(公告)日：2011-02-17

    申请号：US12913973

    申请日：2010-10-28

    申请人： Hideo Takami ,  Hirohisa Ajima

    发明人： Hideo Takami ,  Hirohisa Ajima

    IPC分类号： C23C14/14

    CPC分类号： C22C28/00 ,  C22C1/04 ,  C22C30/00 ,  C23C14/3414 ,  G11B5/851

    摘要： A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 μm or less, and Ge powder having a minus sieve of 250 μm or less and having a BET specific surface area of 0.4 m2/g or less are dispersively mixed in an even manner, and sintered thereafter. Thereby provided is a Ge—Cr alloy sputtering target capable of suppressing variation of the deposition speed and film composition, as well as improving the production yield, of the GeCrN layer deposited with reactive sputtering as the intermediate layer between the recording layer and protective layer of a phase change optical disk, and the manufacturing method of such a target.

    摘要翻译： 含有5〜50原子％的Cr且相对密度为95％以上的Ge-Cr合金溅射靶，以及这样的Ge-Cr合金溅射靶的制造方法，其中，具有负极筛为75μm的Cr粉末或 较少，并且具有250μm或更小的负极筛和BET比表面积为0.4m 2 / g或更小的Ge粉末以均匀的方式分散混合，然后烧结。 由此，作为记录层与保护层之间的中间层，能够抑制沉积有反应性溅射的GeCrN层的沉积速度和膜组成的变化以及提高生产率的Ge-Cr合金溅射靶 相变光盘及其制造方法。

    Sputtering Target for Phase-Change Memory, Film for Phase Change Memory formed by using the Target, and Method for Producing the Target
    14.
    发明申请
    Sputtering Target for Phase-Change Memory, Film for Phase Change Memory formed by using the Target, and Method for Producing the Target 有权
    用于相变存储器的溅射目标，通过使用目标形成的相变记忆膜，以及用于产生目标的方法

    公开(公告)号：US20070062808A1

    公开(公告)日：2007-03-22

    申请号：US11533945

    申请日：2006-09-21

    申请人： Masataka Yahagi ,  Yuichiro Shindo ,  Hideo Takami

    发明人： Masataka Yahagi ,  Yuichiro Shindo ,  Hideo Takami

    IPC分类号： C23C14/00

    CPC分类号： G11B7/243 ,  C23C14/06 ,  C23C14/3414 ,  G11B7/266 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625

    摘要： The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less. This sputtering target for a phase change memory is capable of reducing, as much as possible, impurities that cause the reduction in the number of times rewriting can be conducted as a result of such impurities segregating and condensing in the vicinity of the boundary face of the memory point and non-memory point; in particular, impurity elements that affect the crystallization speed, reducing the compositional deviation of the target in relation to the intended composition, and improving the rewriting properties and crystallization speed of a phase change memory by suppressing the compositional segregation of the target.

    摘要翻译： 本发明提供了一种用于相变存储器的溅射靶和形成有这种靶的相变存储膜及其制造方法，其特征在于，溅射靶由不低于三分体系的元件组成，并且具有 作为其主要成分，选自锑，碲和硒的一种或多种组分，并且与预期组成相关的组成偏差为±1.0at％或更低。 用于相变存储器的这种溅射靶能够尽可能地减少由于这种杂质在边界面附近偏析和冷凝而引起重写次数减少的杂质。 记忆点和非记忆点; 特别是影响结晶速度的杂质元素，降低目标相对于目标组成的组成偏差，通过抑制靶的组成偏析来提高相变记忆的重写性能和结晶速度。

    FERROMAGNETIC SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME
    18.
    发明申请
    FERROMAGNETIC SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME 审中-公开
    FERROMAGNETIC SPUTTERING目标及其制造方法

    公开(公告)号：US20130175167A1

    公开(公告)日：2013-07-11

    申请号：US13824146

    申请日：2011-11-21

    申请人： Yuki Ikeda ,  Hideo Takami

    发明人： Yuki Ikeda ,  Hideo Takami

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3414 ,  C22C1/1084 ,  C22C32/0026 ,  C22C2202/02 ,  G11B5/851

    摘要： Provided is a ferromagnetic sputtering target having a composition containing 20 mol % or less of Cr, 5 to 30 mol % of Pt, 5 to 15 mol % of SiO2, 0.05 to 0.60 mol % of Sn, with Co as a remainder thereof, wherein the Sn is contained in SiO2 particles (B) dispersed in a metal substrate (A). The method yields a ferromagnetic sputtering target containing dispersed nonmagnetic particles. The target can prevent the abnormal electrical discharge of oxides which causes the generation of particles during sputtering.

    摘要翻译： 本发明提供一种具有Cr含量为20摩尔％以下，Pt：5〜15摩尔％，SiO：5〜15摩尔％，Sn：0.05〜0.60摩尔％，Co：余量的组成的铁磁性溅射靶， Sn分散在金属基板（A）中的SiO 2颗粒（B）中。 该方法产生含有分散的非磁性颗粒的铁磁溅射靶。 该目标可以防止在溅射过程中产生颗粒的氧化物的异常放电。

    Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder
    19.
    发明申请
    Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder 有权
    用于溅射靶的铬氧化物粉末和由这种氧化铬粉末制造的溅射靶

    公开(公告)号：US20090139859A1

    公开(公告)日：2009-06-04

    申请号：US11916301

    申请日：2006-03-10

    申请人： Hideo Takami ,  Masataka Yahagi

    发明人： Hideo Takami ,  Masataka Yahagi

    IPC分类号： C23C14/34 ,  C09K3/00

    CPC分类号： C23C14/3414 ,  C01G37/033 ,  C01P2004/61 ,  C01P2006/80 ,  C04B35/12 ,  C04B35/62645 ,  C04B35/645 ,  C04B2235/3251 ,  C04B2235/446 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/724 ,  C04B2235/726 ,  C04B2235/77

    摘要： Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks.

    摘要翻译： 本发明提供一种由氧化铬构成的溅射靶的氧化铬粉末，其中硫为100重量ppm以下。 该溅射靶含有5摩尔％以上的氧化铬或氧化铬，其中溅射靶中的硫含量为100重量ppm以下，除水分，碳，氮，硫的气体成分以外的纯度为99.95重量％以上 。 用于溅射靶的氧化铬粉末能够提高氧化铬本身的纯度，以及在制造溅射靶时提高烧结密度。 作为使用这种氧化铬粉末的溅射靶的制造的结果，晶粒被精制，并且是不产生裂纹的均匀且致密的溅射靶。