公开(公告)号：US20170301834A1

公开(公告)日：2017-10-19

申请号：US15434969

申请日：2017-02-16

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Salman Akram ,  Jyoti Kiron Bhardwaj

IPC: H01L33/54 ,  H01L33/00 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48

CPC classification number: H01L33/54 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/502 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: Light Emitting Devices (LEDs) are fabricated on a wafer substrate with one or more thick metal layers that provide structural support to each LED. The streets, or lanes, between individual LEDs do not include this metal, and the wafer can be easily sliced/diced into singulated self-supporting LEDs. Because these devices are self-supporting, a separate support submount is not required. Before singulation, further processes may be applied at the wafer-level; after singulation, these self-supporting LEDs may be picked and placed upon an intermediate substrate for further processing as required. In an embodiment of this invention, protective optical domes are formed over the light emitting devices at the wafer-level or while the light emitting devices are situated on the intermediate substrate.

公开(公告)号：US20160329468A1

公开(公告)日：2016-11-10

申请号：US14902001

申请日：2014-06-23

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Salman Akram ,  Quanbo Zou

IPC: H01L33/44 ,  H01L33/48 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: Semiconductor LED layers are epitaxially gown on a patterned surface of a sapphire substrate (10). The patterned surface improves light extraction. The LED layers include a p-type layer and an n-type layer. The LED layers are etched to expose the n-type layer. One or more first metal layers are patterned to electrically contact the p-type layer and the n-type layer to form a p-metal contact (32) and an n-metal contact (33). A dielectric polymer stress-buffer layer (36) is spin-coated over the first metal layers to form a substantially planar surface over the first metal layers. The stress-buffer layer has openings exposing the p-metal contact and the n-metal contact. Metal solder pads (44, 45) are formed over the stress-buffer layer and electrically contact the p-metal contact and the n-metal contact through the openings in the stress-buffer layer. The stress-buffer layer acts as a buffer to accommodate differences in CTEs of the solder pads and underlying layers.

Abstract translation: 半导体LED层在蓝宝石衬底（10）的图案化表面上是外延的。 图案化表面改善了光提取。 LED层包括p型层和n型层。 蚀刻LED层以露出n型层。 将一个或多个第一金属层图案化以与p型层和n型层电接触以形成p金属接触（32）和n-金属接触（33）。 电介质聚合物应力缓冲层（36）被旋涂在第一金属层上以在第一金属层上形成基本平坦的表面。 应力缓冲层具有暴露p金属接触和n-金属接触的开口。 金属焊盘（44,45）形成在应力缓冲层之上，并通过应力缓冲层中的开口与p-金属触点和n-金属触点电接触。 应力缓冲层用作缓冲器以适应焊盘和下层的CTE的差异。

公开(公告)号：US20150144971A1

公开(公告)日：2015-05-28

申请号：US14405532

申请日：2013-06-04

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Jipu Lei ,  Stefano Schiaffino ,  ALexander H. Nickel ,  Mooi Guan Ng ,  Grigoriy Basin ,  Salman Akram

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/54

CPC classification number: H01L33/62 ,  H01L24/94 ,  H01L27/156 ,  H01L33/54 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Thick metal pillars are formed upon light emitting dies while the dies are still on their supporting wafer. A molding compound is applied to fill the space between the pillars on each die, and contact pads are formed atop the pillars. The metal pillars provide electrical contact between the contact pads and the electrical contacts of each light emitting die. The metal pillars maybe formed upon an upper metal layer of each die, and this upper metal layer maybe patterned to provide connections to individual elements within the die.

Abstract translation: 在发光模具上形成厚的金属柱，同时模具仍然在其支撑晶片上。 施加模塑料以填充每个模具上的柱之间的空间，并且在柱之上形成接触垫。 金属柱提供接触焊盘和每个发光管芯的电触点之间的电接触。 金属柱可以形成在每个模具的上金属层上，并且该上金属层可以被图案化以提供到管芯内的各个元件的连接。