公开(公告)号：US09871167B2

公开(公告)日：2018-01-16

申请号：US14783780

申请日：2014-03-31

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Brendan Jude Moran ,  Marc Andre de Samber ,  Grigoriy Basin ,  Norbertus Antonius Maria Sweegers ,  Mark Melvin Butterworth ,  Kenneth Vampola ,  Clarisse Mazuir

IPC: H01L33/46 ,  H01L25/075 ,  H01L33/20 ,  H01L33/44 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/465 ,  H01L33/502 ,  H01L33/56 ,  H01L33/62 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2933/0091

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.

公开(公告)号：US20170256690A1

公开(公告)日：2017-09-07

申请号：US15506663

申请日：2015-08-26

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Floris Maria Hermansz Crompvoets ,  Benno Spinger ,  Pascal Bloemen ,  Norbertus Antonius Maria Sweegers ,  Marc Andre de Samber

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L33/46 ,  H01L33/502 ,  H01L33/58 ,  H01L51/5271 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: There is proposed a light source comprising: a semiconductor diode structure adapted to generate light; and an optical enhancement section above the semiconductor diode structure and adapted to output light from the semiconductor diode structure. A partially-reflective layer covers at least a portion of the top of the optical enhancement section and is adapted to reflect a portion of the output light towards the optical enhancement section. The partially-reflective layer has a light transmittance characteristic that varies laterally.

公开(公告)号：US09812612B2

公开(公告)日：2017-11-07

申请号：US15036879

申请日：2014-11-06

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Sander Petrus Martinus Noijen ,  Roy Antoin Bastiaan Engelen ,  Norbertus Antonius Maria Sweegers ,  Marc Andre de Samber

IPC: H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L33/00

Abstract: A solid state light emitting device includes a light emitting stack (20), a metallization (30), comprising a guard layer (36) of metal, and a dielectric layer (50) over the guard layer (36) of the metallization. During subsequent processing delamination and/or cracking may occur at the edges of the devices, sometimes referred to as die edge defects. To address these defects a plurality of stress-relief elements (62, 64) and/or anchor elements may be provided in an edge region of the metallization and/or dielectric layer for reducing delamination. The stress-relief elements (62, 64) are formed by regions of reduced thickness or increased thickness in the guard layer (36).

公开(公告)号：US20170317251A1

公开(公告)日：2017-11-02

申请号：US15520782

申请日：2015-10-20

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Norbertus Antonius Maria Sweegers ,  Floris Maria Hermansz Crompvoets ,  Marc Andre De Samber

IPC: H01L33/60 ,  H01L33/50 ,  H01L27/15

CPC classification number: H01L33/60 ,  H01L27/156 ,  H01L33/46 ,  H01L33/486 ,  H01L33/502 ,  H01L33/507 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: A light emitting arrangement is suggested for generating directional projections of light with sharply defined beam profile. Light from a top-emitting solid state light source (12), having reflective side-coating (34), is pre-collimated via a beam-shaping optic (16), before being propagated through a secondary collimating funnel (18), capturing any light rays with still too great an escape angle. Chip-scale package dimensions may be achieved through the use of a thin-film side-coating and undersized phosphor layers. Substrate level process flow further allows for parallel processing of a plurality of devices.

公开(公告)号：US20160329467A1

公开(公告)日：2016-11-10

申请号：US15036879

申请日：2014-11-06

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Sander Petrus Martinus Noijen ,  Roy Antoin Bastiaan Engelen ,  Norbertus Antonius Maria Sweegers ,  Marc Andre de Samber

IPC: H01L33/38 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/387 ,  H01L2933/0016

Abstract: A solid state light emitting device includes a light emitting stack (20), a metallization (30), comprising a guard layer (36) of metal, and a dielectric layer (50) over the guard layer (36) of the metallization. During subsequent processing delamination and/or cracking may occur at the edges of the devices, sometimes referred to as die edge defects. To address these defects a plurality of stress-relief elements (62, 64) and/or anchor elements may be provided in an edge region of the metallization and/or dielectric layer for reducing delamination. The stress-relief elements (62, 64) are formed by regions of reduced thickness or increased thickness in the guard layer (36).

Abstract translation: 固态发光器件包括发光层（20），金属化层（30），其包括金属的保护层（36）和位于金属化层的保护层（36）之上的介电层（50）。 在随后的处理期间，在器件的边缘处可能发生分层和/或破裂，有时称为管芯边缘缺陷。 为了解决这些缺陷，可以在金属化和/或电介质层的边缘区域中提供多个应力消除元件（62,64）和/或锚定元件，以减少分层。 应力消除元件（62,64）由保护层（36）中厚度减小或厚度增加的区域形成。