公开(公告)号：US10018919B2

公开(公告)日：2018-07-10

申请号：US15224290

申请日：2016-07-29

Applicant: KLA-Tencor Corporation

Inventor： Myungjun Lee ,  Mark D. Smith

IPC: G03B27/54 ,  G03F7/20 ,  G03F1/22

CPC classification number: G03F7/70283 ,  G03F1/22 ,  G03F1/38 ,  G03F7/70091 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: A lithography system includes an illumination source including two illumination poles separated along a first direction and symmetrically distributed around an optical axis, a pattern mask to receive illumination from the illumination source, and a set of projection optics to generate an image corresponding to the pattern mask onto a sample. The pattern mask includes a metrology target pattern mask and device pattern mask elements. The device pattern mask elements are distributed along the first direction with a device separation distance. The metrology target pattern mask includes a set of metrology target pattern mask elements having a diffraction pattern corresponding to that of the device pattern mask elements. A metrology target generated on the sample associated with the metrology target pattern mask is characterizable along a second direction and has printing characteristics corresponding to those of device pattern elements generated on the sample associated with the device pattern mask elements.

公开(公告)号：US20170343903A1

公开(公告)日：2017-11-30

申请号：US15224290

申请日：2016-07-29

Applicant: KLA-Tencor Corporation

Inventor： Myungjun Lee ,  Mark D. Smith

IPC: G03F7/20 ,  G03F1/22

CPC classification number: G03F7/70283 ,  G03F1/22 ,  G03F1/38 ,  G03F7/70091 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: A lithography system includes an illumination source including two illumination poles separated along a first direction and symmetrically distributed around an optical axis, a pattern mask to receive illumination from the illumination source, and a set of projection optics to generate an image corresponding to the pattern mask onto a sample. The pattern mask includes a metrology target pattern mask and device pattern mask elements. The device pattern mask elements are distributed along the first direction with a device separation distance. The metrology target pattern mask includes a set of metrology target pattern mask elements having a diffraction pattern corresponding to that of the device pattern mask elements. A metrology target generated on the sample associated with the metrology target pattern mask is characterizable along a second direction and has printing characteristics corresponding to those of device pattern elements generated on the sample associated with the device pattern mask elements.